Substrate temperature measurement in a molecular beam epitaxy chamber using in situ GaAs photoluminescence monitoring

• Published in: Applied physics letters Vol. 59; no. 10; pp. 1215 - 1217
• Main Authors: SANDROFF, C. J, TURCO-SANDROFF, F. S, FLOREZ, L. T, HARBISON, J. P
• Format: Journal Article
• Language: English
• Published: Melville, NY American Institute of Physics 02-09-1991
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties; Physics; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Crystal growth; Support; Photoluminescence; Aluminium Gallium Arsenides Mixed; Multiple layer; High temperature; Experimental study; Gallium Arsenides; Growth from vapor; Energy gap; Molecular beam condensation; Chemical composition; Heterojunction
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.105507

We use GaAs photoluminescence (PL) obtained in situ in an epitaxial growth chamber to measure substrate temperatures from 25 to 450 °C with an accuracy of ±8 °C. Since temperature is obtained directly from the measured GaAs band gap, the approach is free of the problems associated with thermal contacts and emissivity calibration, which are encountered when using thermocouples and pyrometers. The PL technique can be used for any type of sample mounting, and since absolute temperature is measured, it is unnecessary to track the thermal history of the sample.