Formation of Dielectric Nanolayers of Aluminum and Silicon Oxides on AIIIBV Semiconductors
The results of investigations of the synthesis of silicon and aluminum oxide nanolayers on the GaAs, InAs, and InSb binary semiconductor surface by molecular layering (atomic layer deposition) are generalized. The conditions for the layer-by-layer growth of the surface nanostructures are established...
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| Published in: | Russian microelectronics Vol. 48; no. 2; pp. 80 - 84 |
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| Format: | Journal Article |
| Language: | English |
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Pleiades Publishing
2019
Springer Nature B.V |
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| Abstract | The results of investigations of the synthesis of silicon and aluminum oxide nanolayers on the GaAs, InAs, and InSb binary semiconductor surface by molecular layering (atomic layer deposition) are generalized. The conditions for the layer-by-layer growth of the surface nanostructures are established and some of their dielectric characteristics are estimated. |
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| AbstractList | The results of investigations of the synthesis of silicon and aluminum oxide nanolayers on the GaAs, InAs, and InSb binary semiconductor surface by molecular layering (atomic layer deposition) are generalized. The conditions for the layer-by-layer growth of the surface nanostructures are established and some of their dielectric characteristics are estimated. |
| Author | Ezhovskii, Yu. K. |
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| Copyright | Pleiades Publishing, Ltd. 2019 Copyright Springer Nature B.V. 2019 |
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| References | Tsyganenko, A.A., Mardilovich, P.P., Lysenko, G.M., and Trokhimets, A.I., IR spectroscopy in the surface study, in Uspekhi fotoniki, Sb. (Achievements in Photonics, Collection of Articles), Leningrad: Leningr. Gos. Univ., 1987, no. 9, pp. 28–68. AzzamR.BasharaN.Ellipsometry and Polarized Light1977Amsterdam, New York, OxfordNorth–Holland RocoM.C.WilliamsR.S.AlivisatosP.Nanotechnology Research Directions: IWGN Workshop Report, Vision for Nanotechnology in the Next Decade2000NetherlandsSpringer SuntolaT.Atomic layers epitaxyMater. Sci. Rep.1989426131210.1016/S0920-2307(89)80006-4 Gromov, V.K., Vvedenie v ellipsometriyu (Introduction to Ellipsometry), Leningrad: Leningr. Gos. Univ., 1986. EzhovskiiYu.K.Formation and dielectric properties of nanolayers of tantalum and aluminum oxidesRuss. Microelectron.201443424810.1134/S1063739713060048 GelatosJ.ChungH.ThakurR.ALD for sub-90 nm device node barriers, contacts and capacitorsSolid State Technol.200324448 EzhovskiiYu.K.Chemical nanotechnology of oxide and nitride low-dimensional structures on a semiconductor matrixRuss. Microelectron.20103918218910.1134/S1063739710030054 EzhovskiiYu.K.Quantitative estimation of the reactivity of the surface of solids on the basis of inductive constantsRuss. Chem. Rev.20047319520410.1070/RC2004v073n02ABEH000830 Nishizava, J. and Kurabayash, T., Latest molecular layer epitaxy technology, Chem. Sustain. Develop., 2000, no. 8, pp. 5–12. Seidel, T., Londergan, A., and Winkler, L., Progress and opportunities in atomic layer deposition, Solid State Technol., 2003, no. 5, pp. 67–71. MingX.Assault on it RC road blocks led by atomic layer depositionSolid State Technol.2001447074 Aleskovskii, V.B., Chemical assembly of materials, Vestn. Akad. Nauk SSSR, 1975, no. 6, pp. 48–54. ChangL.PloogK.Molecular Beam Epitaxy and Heterostructures1985Dordrecht, BostonM. Nijhoff Miikkulainen, V., Leskela, M., Ritala, M., and Puurunen, R.L., Crystallinity of inorganic films grown by atomic layer deposition: overview and general trends, J. Appl. Phys., 2013, no. 113, pp. 021301–021401. J. Gelatos (7048_CR8) 2003; 2 7048_CR9 7048_CR13 (7048_CR2) 1985 7048_CR4 Yu.K. Ezhovskii (7048_CR10) 2010; 39 7048_CR6 7048_CR5 Yu.K. Ezhovskii (7048_CR11) 2004; 73 7048_CR15 (7048_CR1) 2000 X. Ming (7048_CR7) 2001; 44 R. Azzam (7048_CR12) 1977 Yu.K. Ezhovskii (7048_CR14) 2014; 43 T. Suntola (7048_CR3) 1989; 4 |
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| SubjectTerms | Aluminum oxide Atomic layer epitaxy Electrical Engineering Engineering Silicon oxides |
| Title | Formation of Dielectric Nanolayers of Aluminum and Silicon Oxides on AIIIBV Semiconductors |
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