Formation of Dielectric Nanolayers of Aluminum and Silicon Oxides on AIIIBV Semiconductors

Formation of Dielectric Nanolayers of Aluminum and Silicon Oxides on AIIIBV Semiconductors

The results of investigations of the synthesis of silicon and aluminum oxide nanolayers on the GaAs, InAs, and InSb binary semiconductor surface by molecular layering (atomic layer deposition) are generalized. The conditions for the layer-by-layer growth of the surface nanostructures are established...

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Bibliographic Details
Published in:Russian microelectronics Vol. 48; no. 2; pp. 80 - 84
Main Author: Ezhovskii, Yu. K.
Format: Journal Article
Language:English
Published: Moscow Pleiades Publishing 2019
Springer Nature B.V
Subjects:
Aluminum oxide
Atomic layer epitaxy
Electrical Engineering
Engineering
Silicon oxides
Online Access:Get full text
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Summary:The results of investigations of the synthesis of silicon and aluminum oxide nanolayers on the GaAs, InAs, and InSb binary semiconductor surface by molecular layering (atomic layer deposition) are generalized. The conditions for the layer-by-layer growth of the surface nanostructures are established and some of their dielectric characteristics are estimated.
ISSN:1063-7397
1608-3415
DOI:10.1134/S1063739719020033