Compact all-optical switches based on photon-induced suppression of mode interference
An optically activated optical switch based on suppression of mode interference （SMI） is presented. The imaging properties of multi-mode interference （MMI） section in the switch with Y-branch can be modified by a controlling light injection. The switch was simulated by finite difference beam propaga...
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| Published in: | Chinese optics letters Vol. 4; no. 2; pp. 93 - 95 |
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| Main Author: | |
| Format: | Journal Article |
| Language: | English |
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Department of Information and Electronic Engineering, Zhejiang University, Hangzhou 310027
10-02-2006
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| Abstract | An optically activated optical switch based on suppression of mode interference （SMI） is presented. The imaging properties of multi-mode interference （MMI） section in the switch with Y-branch can be modified by a controlling light injection. The switch was simulated by finite difference beam propagation method （FD-BPM） and fabricated on GaAlAs/GaAs epitaxial materials. At the wavelength of 1.31 μm, the primary experiment showed an extinction ratio of about 8 dB with controlling light power density of 73.5 W/mm^2. |
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| AbstractList | An optically activated optical switch based on suppression of mode interference (SMI) is presented. The imaging properties of multi-mode interference (MMI) section in the switch with Y-branch can be modified by a controlling light injection. The switch was simulated by finite difference beam propagation method (FD-BPM) and fabricated on GaAlAs/GaAs epitaxial materials. At the wavelength of 1.31 mum, the primary experiment showed an extinction ratio of about 8 dB with controlling light power density of 73.5 W/mm(2). An optically activated optical switch based on suppression of mode interference （SMI） is presented. The imaging properties of multi-mode interference （MMI） section in the switch with Y-branch can be modified by a controlling light injection. The switch was simulated by finite difference beam propagation method （FD-BPM） and fabricated on GaAlAs/GaAs epitaxial materials. At the wavelength of 1.31 μm, the primary experiment showed an extinction ratio of about 8 dB with controlling light power density of 73.5 W/mm^2. |
| Author | 李龙志 唐奕 杨建义 王明华 江晓清 |
| AuthorAffiliation | Department of Information and Electronic Engineering, Zhejiang University, Hangzhou 310027 |
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| Snippet | An optically activated optical switch based on suppression of mode interference （SMI） is presented. The imaging properties of multi-mode interference （MMI）... An optically activated optical switch based on suppression of mode interference (SMI) is presented. The imaging properties of multi-mode interference (MMI)... |
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| SubjectTerms | 光子感应压制 全光学开关 晶体材料 模式干扰 |
| Title | Compact all-optical switches based on photon-induced suppression of mode interference |
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