Hot carrier dynamics in a (GaInSb/InAs)/GaInAlAsSb superlattice multiple quantum well measured with mid-wave infrared, subpicosecond photoluminescence upconversion
We have extended the technique of subpicosecond photoluminescence upconversion to the mid-wave infrared spectral region and have used this system to investigate the energy relaxation of hot, optically injected electron-hole pairs in a narrow-band-gap (2.32 μm) (GaInSb/InAs)/ GaInAlAsSb superlattice...
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| Published in: | Applied physics letters Vol. 70; no. 9; pp. 1125 - 1127 |
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| Main Authors: | , , , , |
| Format: | Journal Article |
| Language: | English |
| Published: |
03-03-1997
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| Abstract | We have extended the technique of subpicosecond photoluminescence upconversion to the mid-wave infrared spectral region and have used this system to investigate the energy relaxation of hot, optically injected electron-hole pairs in a narrow-band-gap (2.32 μm) (GaInSb/InAs)/ GaInAlAsSb superlattice multiple quantum well. These and similar structures are currently of interest as the active region for mid-wave infrared diode lasers. The measurements demonstrate that carriers, which are injected with nearly 1 eV of excess energy, are well described by a hot, thermalized distribution in the wells within 2 ps after excitation. For a carrier density of 1017 cm−3, cooling by optical phonon emission is essentially complete 15 ps after injection. By fitting the time dependence of the carrier temperature, we estimate an effective carrier- optical-phonon scattering time of 1.2 ps. |
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| AbstractList | We have extended the technique of subpicosecond photoluminescence upconversion to the mid-wave infrared spectral region and have used this system to investigate the energy relaxation of hot, optically injected electron-hole pairs in a narrow-band-gap (2.32 μm) (GaInSb/InAs)/ GaInAlAsSb superlattice multiple quantum well. These and similar structures are currently of interest as the active region for mid-wave infrared diode lasers. The measurements demonstrate that carriers, which are injected with nearly 1 eV of excess energy, are well described by a hot, thermalized distribution in the wells within 2 ps after excitation. For a carrier density of 1017 cm−3, cooling by optical phonon emission is essentially complete 15 ps after injection. By fitting the time dependence of the carrier temperature, we estimate an effective carrier- optical-phonon scattering time of 1.2 ps. |
| Author | Boggess, Thomas F. Jang, D.-J. Olesberg, J. T. Flatté, M. E. Hasenberg, T. C. |
| Author_xml | – sequence: 1 givenname: D.-J. surname: Jang fullname: Jang, D.-J. – sequence: 2 givenname: J. T. surname: Olesberg fullname: Olesberg, J. T. – sequence: 3 givenname: M. E. surname: Flatté fullname: Flatté, M. E. – sequence: 4 givenname: Thomas F. surname: Boggess fullname: Boggess, Thomas F. – sequence: 5 givenname: T. C. surname: Hasenberg fullname: Hasenberg, T. C. |
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| Cites_doi | 10.1063/1.108480 10.1063/1.115609 10.1049/el:19960395 10.1103/PhysRevLett.42.1090 10.1063/1.116360 10.1016/0038-1101(89)90261-X 10.1016/0022-2313(86)90066-9 10.1063/1.115546 10.1063/1.359798 10.1049/el:19950221 10.1103/PhysRevLett.55.2359 10.1109/JLT.1986.1074751 10.1063/1.115354 10.1364/OL.20.002309 10.1109/3.535367 10.1063/1.111022 10.1063/1.116374 10.1103/PhysRevB.53.1963 |
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| References | (2023061916052965500_r15) 1979; 42 (2023061916052965500_r16) 1985; 55 (2023061916052965500_r14) 1986; 35 (2023061916052965500_r8) 1995; 20 (2023061916052965500_r2) 1995; 67 (2023061916052965500_r1a) 1994; 64 (2023061916052965500_r6) 1994; QE-30 (2023061916052965500_r11) 1989; 32 (2023061916052965500_r12) 1988; QE-24 (2023061916052965500_r1) 1996; 68 (2023061916052965500_r5) 1992; 61 (2023061916052965500_r3) 1995; 31 (2023061916052965500_r10) 1996; 32 (2023061916052965500_r1d) 1996; 32 (2023061916052965500_r4) 1986; 4 (2023061916052965500_r1b) 1995; 67 (2023061916052965500_r1c) 1996; 68 (2023061916052965500_r7) 1995; 78 (2023061916052965500_r13) 1996; 53 2023061916052965500_r17 (2023061916052965500_r9) 1996; 68 2023061916052965500_r18 |
| References_xml | – volume: 61 start-page: 2905 year: 1992 ident: 2023061916052965500_r5 publication-title: Appl. Phys. Lett. doi: 10.1063/1.108480 – volume: 68 start-page: 2135 year: 1996 ident: 2023061916052965500_r9 publication-title: Appl. Phys. Lett. doi: 10.1063/1.115609 – volume: 32 start-page: 560 year: 1996 ident: 2023061916052965500_r1d publication-title: Electron Lett. doi: 10.1049/el:19960395 – volume: 42 start-page: 1090 year: 1979 ident: 2023061916052965500_r15 publication-title: Phys. Rev. Lett. doi: 10.1103/PhysRevLett.42.1090 – volume: QE-24 start-page: 276 year: 1988 ident: 2023061916052965500_r12 publication-title: IEEE J. Quantum Electron. – volume: 68 start-page: 2936 year: 1996 ident: 2023061916052965500_r1 publication-title: Appl. Phys. Lett. doi: 10.1063/1.116360 – volume: 32 start-page: 1485 year: 1989 ident: 2023061916052965500_r11 publication-title: Solid-State Electron. doi: 10.1016/0038-1101(89)90261-X – volume: 35 start-page: 121 year: 1986 ident: 2023061916052965500_r14 publication-title: J. Lumin. doi: 10.1016/0022-2313(86)90066-9 – volume: 67 start-page: 1346 year: 1995 ident: 2023061916052965500_r1b publication-title: Appl. Phys. Lett. doi: 10.1063/1.115546 – volume: 78 start-page: 4552 year: 1995 ident: 2023061916052965500_r7 publication-title: J. Appl. Phys. doi: 10.1063/1.359798 – volume: 31 start-page: 275 year: 1995 ident: 2023061916052965500_r3 publication-title: Electron. Lett. doi: 10.1049/el:19950221 – volume: 55 start-page: 2359 year: 1985 ident: 2023061916052965500_r16 publication-title: Phys. Rev. Lett. doi: 10.1103/PhysRevLett.55.2359 – volume: 4 start-page: 504 year: 1986 ident: 2023061916052965500_r4 publication-title: J. Lightwave Technol. doi: 10.1109/JLT.1986.1074751 – volume: 67 start-page: 3700 year: 1995 ident: 2023061916052965500_r2 publication-title: Appl. Phys. Lett. doi: 10.1063/1.115354 – volume: 20 start-page: 2309 year: 1995 ident: 2023061916052965500_r8 publication-title: Opt. Lett. doi: 10.1364/OL.20.002309 – volume: QE-30 start-page: 366 year: 1994 ident: 2023061916052965500_r6 publication-title: IEEE J. Quantum Electron. – volume: 32 start-page: 1620 year: 1996 ident: 2023061916052965500_r10 publication-title: IEEE J. Quantum Electron. doi: 10.1109/3.535367 – ident: 2023061916052965500_r17 – ident: 2023061916052965500_r18 – volume: 64 start-page: 812 year: 1994 ident: 2023061916052965500_r1a publication-title: Appl. Phys. Lett. doi: 10.1063/1.111022 – volume: 68 start-page: 2976 year: 1996 ident: 2023061916052965500_r1c publication-title: Appl. Phys. Lett. doi: 10.1063/1.116374 – volume: 53 start-page: 1963 year: 1996 ident: 2023061916052965500_r13 publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.53.1963 |
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| Title | Hot carrier dynamics in a (GaInSb/InAs)/GaInAlAsSb superlattice multiple quantum well measured with mid-wave infrared, subpicosecond photoluminescence upconversion |
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