Band bending measurement of HfO2/SiO2/Si capacitor with ultra-thin La2O3 insertion by XPS

• Published in: Applied surface science Vol. 254; no. 19; pp. 6106 - 6108
• Main Authors: KAKUSHIMA, K, OKAMOTO, K, HATTORI, T, IWAI, H, ADACHI, M, TACHI, K, SONG, J, SATO, S, KAWANAGO, T, AHMET, P, TSUTSUI, K, SUGII, N
• Format: Conference Proceeding Journal Article
• Language: English
• Published: Amsterdam Elsevier Science 30-07-2008
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Physics; Inorganic compounds; Band bending; Capacitors; Silicon oxides; Transition element compounds; Hafnium oxide; Silicon; Keywood High-κ,Flat band voltage,Hard X-ray photoemission spectroscopy,(HX-PES) 77.55.+f; X-ray photoelectron spectra
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2008.02.177

The flat band voltage shifts of HfO2/SiO2/nSi capacitors with ultra-thin La2O3 insertion at HfO2/SiO2 interface have been confirmed using hard X-ray photoelectron spectroscopy (HX-PES). By increasing the amount of La2O3 insertion, the binding energy of Si 1s core spectra increases, which means that the surface potential of Si substrate also increases. A voltage drop difference of HfO2 and La2O3 at SiO2 interface can be estimated to be 0.40 V.