Formation and certain properties of zinc chalcogenide nanolayers on semiconductor matrices

Formation and certain properties of zinc chalcogenide nanolayers on semiconductor matrices

The generalized results on the synthesis of zinc chalcogenide ultrathin layers using an atomic layer deposition on the surface of silicon and A III B V compounds have been presented. The main regularities inherent in the chemosorption of the components and the conditions required for the layered mec...

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Bibliographic Details
Published in:Russian microelectronics Vol. 45; no. 1; pp. 18 - 25
Main Authors: Ezhovskii, Yu. K., Zakharova, N. V.
Format: Journal Article
Language:English
Published: Moscow Pleiades Publishing 2016
Subjects:
Electrical Engineering
Engineering
ZnSe
GaAs
InSb
Atomic Layer Deposition
ZnTe
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Summary:The generalized results on the synthesis of zinc chalcogenide ultrathin layers using an atomic layer deposition on the surface of silicon and A III B V compounds have been presented. The main regularities inherent in the chemosorption of the components and the conditions required for the layered mechanism responsible for the formation of nanostructures of the compounds mentioned are established. The electrical properties of the synthesized nanostructures have been estimated.
ISSN:1063-7397
1608-3415
DOI:10.1134/S1063739716010042