10 GB/s bit-synchronizer circuit with automatic timing alignment by clock phase shifting using quantum-well AlGaAs/GaAs/AlGaAs
A bit-synchronizer circuit is presented which operated up to a bit rate of Gb/s. The circuit comprises two master-slave flip -flops for data sampling, two EXCLUSIVE-OR gates for clock phase adjustment, an active signal splitter, and an EXCLUSIVE-OR gate for data transition detection. The gain of the...
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Published in: | IEEE journal of solid-state circuits Vol. 27; no. 10; pp. 1347 - 1352 |
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Main Authors: | , , , , , , |
Format: | Journal Article |
Language: | English |
Published: |
IEEE
01-10-1992
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Subjects: | |
Online Access: | Get full text |
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Summary: | A bit-synchronizer circuit is presented which operated up to a bit rate of Gb/s. The circuit comprises two master-slave flip -flops for data sampling, two EXCLUSIVE-OR gates for clock phase adjustment, an active signal splitter, and an EXCLUSIVE-OR gate for data transition detection. The gain of the EXCLUSIVE-OR phase comparator circuit is measured to be 302 mV/rad for a 1010-bit sequence. The margins for monotonous phase comparison are +or-54 degrees relative to the 'in bit cell center' position of the sampling clock edge. The circuit is fabricated by using an enhancement/depletion 0.3 mu m recessed-gate AlGaAs/GaAs/AlGaAs quantum-well FET process. The chip has a power dissipation of 230 mW at a supply voltage of 1.90 V.< > |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0018-9200 1558-173X |
DOI: | 10.1109/4.156436 |