Experimental Comparisons between Tetrakis(dimethylamino)titanium Precursor-Based Atomic-Layer-Deposited and Physical-Vapor-Deposited Titanium–Nitride Gate for High-Performance Fin-Type Metal–Oxide–Semiconductor Field-Effect Transistors

Experimental Comparisons between Tetrakis(dimethylamino)titanium Precursor-Based Atomic-Layer-Deposited and Physical-Vapor-Deposited Titanium–Nitride Gate for High-Performance Fin-Type Metal–Oxide–Semiconductor Field-Effect Transistors

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Bibliographic Details
Published in:Japanese Journal of Applied Physics Vol. 51; no. 4S; p. 4
Main Authors: Hayashida, Tetsuro, Endo, Kazuhiko, Liu, Yongxun, O'uchi, Shin-ichi, Matsukawa, Takashi, Mizubayashi, Wataru, Migita, Shinji, Morita, Yukinori, Ota, Hiroyuki, Hashiguchi, Hiroki, Kosemura, Daisuke, Kamei, Takahiro, Tsukada, Junichi, Ishikawa, Yuki, Yamauchi, Hiromi, Ogura, Atsushi, Masahara, Meishoku
Format: Journal Article
Language:English
Japanese
Published: 01-04-2012
Online Access:Get full text
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Description
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.51.04DA05