Reliability of Nitrided Gate Oxides for N- and P-Type 4H-SiC(0001) Metal–Oxide–Semiconductor Devices

Reliability of Nitrided Gate Oxides for N- and P-Type 4H-SiC(0001) Metal–Oxide–Semiconductor Devices

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Bibliographic Details
Published in:Japanese Journal of Applied Physics Vol. 50; no. 9R; p. 90201
Main Authors: Noborio, Masato, Grieb, Michael, Bauer, Anton J., Peters, Dethard, Friedrichs, Peter, Suda, Jun, Kimoto, Tsunenobu
Format: Journal Article
Language:English
Japanese
Published: 01-09-2011
Online Access:Get full text
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Description
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.50.090201