A 20kpixels CdTe photon-counting imager using XPAD chip

A 20kpixels CdTe sensor has been hybridized on XPAD3S CMOS photon-counting chips, forming a 19,200pixels imaging device. P-type CdTe with rectifying contact has been employed. This sensor works in hole collection mode with a pulse shaping time of about 150ns. Detector construction and operation are...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Vol. 589; no. 2; pp. 268 - 274
Main Authors: Basolo, S., Bérar, J.F., Boudet, N., Breugnon, P., Chantepie, B., Clémens, J.C., Delpierre, P., Dinkespiler, B., Hustache, S., Medjoubi, K., Ménouni, M., Morel, C., Pangaud, P., Vigeolas, E.
Format: Journal Article
Language:English
Published: Elsevier B.V 01-05-2008
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Summary:A 20kpixels CdTe sensor has been hybridized on XPAD3S CMOS photon-counting chips, forming a 19,200pixels imaging device. P-type CdTe with rectifying contact has been employed. This sensor works in hole collection mode with a pulse shaping time of about 150ns. Detector construction and operation are described, and first results obtained with 241Am source as well as diffraction images using an X-ray synchrotron beam are presented. Polarization effects are present, but remain at a very manageable level.
ISSN:0168-9002
1872-9576
DOI:10.1016/j.nima.2008.02.042