How to select power transistors for static converters applications?

• Published in: 2018 13th IEEE International Conference on Industry Applications (INDUSCON) pp. 138 - 143
• Main Authors: Prado, Edemar de Oliveira, Sartori, Hamiltom Confortin, Pinheiro, Jose Renes
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01-11-2018
• Subjects: converters; frequency; Gallium nitride; Insulated gate bipolar transistors; Junctions; losses; MOSFET; power; Power transistors; Silicon carbide
• DOI: 10.1109/INDUSCON.2018.8627069

This paper presents a methodology for select power transistors for static converters applications evaluating losses behavior and comparing different technologies. This analysis is based on thermal and electric models for determination of power losses in IGBTs and Silicon (Si), Silicon Carbide (SIC), CoolMOS and Gallium Nitride (GaN) MOSFETs, evaluating the behavior of each technology towards different frequency ranges, power levels, and different conduction times (duty cycle). For this, an algorithm was developed, which is able of modeling conduction losses and switching losses in the devices, through a scanning process for frequencies, considering different power levels and conduction times. Results show which frequency ranges, power levels and duty cycle where each technology presents better behavior (lower losses), indicating the most appropriate technology to be used in each specific application.