$Under-Bump Metallization Contact Resistance ( R ) Characterization at 10- \mu \text Polymer Passivation Opening$
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Under-Bump Metallization Contact Resistance ( R ) Characterization at 10- \mu \text Polymer Passivation Opening

Under-bump metallization R c is a critical metric for high-density interconnect in electronic devices. We developed a test vehicle to characterize the impact of unit processes on R c for 10-μm polymer passivation opening. We demonstrate that advanced preclean is necessary to achieve low (R c <; 2...

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Bibliographic Details
Published in:	IEEE transactions on components, packaging, and manufacturing technology (2011) Vol. 7; no. 10; pp. 1592 - 1597
Main Authors:	Lianto, Prayudi, King-Jien Chui, Bhushan, Bharat, Chua, H. M. Calvin, Leijun Tang, Chandra Rao, B. S. S., Xin Wang, Ai Long Wu, Yu Gu, Guan Huei See, Sundarrajan, Arvind
Format:	Journal Article
Language:	English
Published:	Piscataway IEEE 01-10-2017 The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects:	Al oxide Al pad Contact resistance contact resistance (<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">Rc ) Electronic devices Impact strength Metallizing Metals organometallic outgassing Passivation Passivity polymer Polymers preclean Purging Residual gas Resistance Silicon compounds Test vehicles under-bump metallization (UBM)
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