Electrical Characterization of Advanced MIM Capacitors With Insulator for High-Density Packaging and RF Applications

• Published in: IEEE transactions on components, packaging, and manufacturing technology (2011) Vol. 2; no. 3; pp. 502 - 509
• Main Authors: Bertaud, T., Bermond, C., Blonkowski, S., Vallee, C., Lacrevaz, T., Farcy, A., Gros-Jean, M., Flechet, B.
• Format: Journal Article
• Language: English
• Published: Piscataway IEEE 01-03-2012; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Capacitance; capacitance frequency measurements; dielectric materials; Dielectrics; Frequency measurement; metal-insulator-metal devices; Microstrip; MIM capacitors; Permittivity; quality factor; temperature coefficient of capacitance; Transmission line measurements; voltage coefficient of capacitance; {\rm ZrO}_{2}
• ISSN: 2156-3950; 2156-3985
• DOI: 10.1109/TCPMT.2011.2182611

This paper deals with the electrical and wideband frequency characterizations of metal-insulator-metal (MIM) capacitors integrating the medium-k material ZrO 2 . First, the in situ material electrical properties are characterized in a frequency range from dc up to 5 GHz by using a microstrip waveguide method. The loss tangent and the permittivity are extracted with frequencies up to 5 GHz. We then investigate the evolution with frequency of the electrical parameters, such as capacitance density, quality factor, temperature coefficient of capacitance, voltage coefficient of capacitance, and cut-off frequency for MIM capacitors which incorporate ZrO 2 dielectric layers with thickness from 10 to 45 nm.