Realization of 10Tbit∕in.2 memory density and subnanosecond domain switching time in ferroelectric data storage

Realization of 10Tbit∕in.2 memory density and subnanosecond domain switching time in ferroelectric data storage

Nanosized inverted domain dots in ferroelectric materials have potential application in ultrahigh-density rewritable data storage systems. Herein, a data storage system is presented based on scanning nonlinear dielectric microscopy and a thin film of ferroelectric single-crystal lithium tantalite. T...

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Bibliographic Details
Published in:Applied physics letters Vol. 87; no. 23
Main Authors: Cho, Yasuo, Hashimoto, Sunao, Odagawa, Nozomi, Tanaka, Kenkou, Hiranaga, Yoshiomi
Format: Journal Article
Language:English
Japanese
Published: 05-12-2005
Online Access:Get full text
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Summary:Nanosized inverted domain dots in ferroelectric materials have potential application in ultrahigh-density rewritable data storage systems. Herein, a data storage system is presented based on scanning nonlinear dielectric microscopy and a thin film of ferroelectric single-crystal lithium tantalite. Through domain engineering, nanosized inverted domain dots have been successfully formed at a data density above 10.1Tbit∕in.2 and subnanosecond (500ps) domain switching speed has been achieved. Moreover, actual information storage is demonstrated at a density of 1Tbit∕in.2
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2140894