Large current SiC power devices for automobile applications

Large current SiC power devices for automobile applications

The high current SiC MOSFETs and high-temperature operation IPM with SiC MOSFETs were fabricated. 300A switching in inductive load circuits was performed using a single chip SiC trench MOSFET. And 250°C (the junction temperature of SiC DMOSFETs) operation of SiC IPMs with a new high-temperature bond...

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Bibliographic Details
Published in:The 2010 International Power Electronics Conference - ECCE ASIA pp. 1023 - 1026
Main Authors: Nakamura, T, Sasagawa, M, Nakano, Y, Otsuka, T, Miura, M
Format: Conference Proceeding
Language:English
Published: IEEE 01-06-2010
Subjects:
Annealing
automobile application
Automobiles
Bonding
Electrodes
MOSFETs
Oxidation
Power electronics
Semiconductor materials
SiC DMOSFET
Silicon carbide
Temperature
trench MOSFET
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Summary:The high current SiC MOSFETs and high-temperature operation IPM with SiC MOSFETs were fabricated. 300A switching in inductive load circuits was performed using a single chip SiC trench MOSFET. And 250°C (the junction temperature of SiC DMOSFETs) operation of SiC IPMs with a new high-temperature bonding method and high-temperature materials (case, encapsulation) was successfully performed.
ISBN:9781424453948
1424453941
DOI:10.1109/IPEC.2010.5542036