850V NMOS driver with active outputs

This paper describes a unique second generation fully integrated NMOS device operating at up to 850V. The 5.46×5.26 mm 2 chip consists of 16 pull-up/pull-down high voltage output drivers, a 16 bit shift register, and gating logic. The HV output drivers are comprised of two high voltage transistors a...

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Bibliographic Details

Published in:	1984 International Electron Devices Meeting pp. 266 - 269
Main Authors:	Martin, R.A., Buhler, S.A., Lao, G.
Format:	Conference Proceeding
Language:	English
Published:	IRE 1984
Subjects:	Dielectric materials Dielectric substrates Driver circuits Logic devices MOS devices Resistors Sheet materials Shift registers Surface resistance Voltage
Online Access:	Get full text
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