Quantum features of low-energy photoluminescence of aluminum nitride films
Photoluminescence of aluminum nitride films at the below bandgap excitation has been studied. It has been found that low-energy (up to 2.02 eV) photoluminescence spectra of the AlN films contain a series of equidistant maxima, the intensities of which decrease with energy. Theoretical analysis has s...
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| Published in: | Semiconductor physics, quantum electronics, and optoelectronics Vol. 27; no. 2; pp. 157 - 161 |
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| Main Authors: | , |
| Format: | Journal Article |
| Language: | English |
| Published: |
21-06-2024
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| Online Access: | Get full text |
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| Summary: | Photoluminescence of aluminum nitride films at the below bandgap excitation has been studied. It has been found that low-energy (up to 2.02 eV) photoluminescence spectra of the AlN films contain a series of equidistant maxima, the intensities of which decrease with energy. Theoretical analysis has shown that the observed photoluminescence features may be caused by strong electron-phonon interaction (long-range interaction of electrons in the band gap with Al3+ ions in the lattice sites). This interaction presumably leads to appearance of quasi-particles in the band gap of AlN, which are a bound state of an electron with an ion in a crystal lattice site. Such quasi-particles have been called “elions”. The energy of an elion is quantized. An elion quantum is equal to the longitudinal optical phonon energy. The low-energy photoluminescence is based on the elion generation and subsequent annihilation mechanism. |
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| ISSN: | 1560-8034 1605-6582 |
| DOI: | 10.15407/spqeo27.02.157 |