Au‐Nanodots Embedded Self‐Rectifying Analog Charge Trap Memristor with Modified Bias Voltage Application Method for Stable Multi‐Bit Hardware‐Based Neural Network

The self‐rectifying memristor with a bilayer of trap‐rich HfO 2 and insulating Ta 2 O 5 oxide layers is considered one of the most promising candidates for the memristive crossbar array due to its superior switching performance, scalability with 3D stacking, and low operating power. However, the out...

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Bibliographic Details

Published in:	Advanced materials technologies
Main Authors:	Park, Taegyun, Kim, Jihun, Kwon, Young Jae, Kim, Han Joon, Yim, Seong Pil, Shin, Dong Hoon, Kim, Yeong Rok, Kim, Hae Jin, Hwang, Cheol Seong
Format:	Journal Article
Language:	English
Published:	13-09-2024
Online Access:	Get full text
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