Charging kinetics in virgin and 1MeV-electron irradiated yttria-stabilized zirconia in the 300–1000K range
A study performed with a dedicated scanning electron microscope (SEM) on the surface electrical properties of (100)-oriented yttria-stabilized zirconia (YSZ) single crystals irradiated with 1MeV electrons is presented. When compared with virgin YSZ, the 1MeV-irradiated YSZ shows a decrease of the in...
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| Published in: | Materials science & engineering. B, Solid-state materials for advanced technology Vol. 130; no. 1-3; pp. 177 - 183 |
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| Main Authors: | , , , , , |
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01-06-2006
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| Abstract | A study performed with a dedicated scanning electron microscope (SEM) on the surface electrical properties of (100)-oriented yttria-stabilized zirconia (YSZ) single crystals irradiated with 1MeV electrons is presented. When compared with virgin YSZ, the 1MeV-irradiated YSZ shows a decrease of the intrinsic total electron emission coefficient sigma0 and an increase of the time constant tau associated with the charging kinetics of the material at room temperature. These measurements performed with the SEM beam at 10keV indicate that the defects induced by the 1MeV-electron irradiation generate a positive electric field of the order of 0.5X106V/m at a depth of about 1mum that prevents electrons to escape. When the SEM beam with a 1.1keV energy is used, a smaller field (0.5X103V/m) is detected closer to the surface (20nm). The fading of these fields during the thermal annealing in the 400-1000K temperature range provides information on the nature of defects induced by the 1MeV-electron irradiation. |
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| AbstractList | A study performed with a dedicated scanning electron microscope (SEM) on the surface electrical properties of (100)-oriented yttria-stabilized zirconia (YSZ) single crystals irradiated with 1MeV electrons is presented. When compared with virgin YSZ, the 1MeV-irradiated YSZ shows a decrease of the intrinsic total electron emission coefficient sigma0 and an increase of the time constant tau associated with the charging kinetics of the material at room temperature. These measurements performed with the SEM beam at 10keV indicate that the defects induced by the 1MeV-electron irradiation generate a positive electric field of the order of 0.5X106V/m at a depth of about 1mum that prevents electrons to escape. When the SEM beam with a 1.1keV energy is used, a smaller field (0.5X103V/m) is detected closer to the surface (20nm). The fading of these fields during the thermal annealing in the 400-1000K temperature range provides information on the nature of defects induced by the 1MeV-electron irradiation. |
| Author | Blaise, G. Costantini, J.M. Pham Van, L. Braga, D. Cousty, J. Thomé, T. |
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| CitedBy_id | crossref_primary_10_1103_PhysRevB_76_085435 crossref_primary_10_1063_1_3073945 |
| Cites_doi | 10.1063/1.369239 10.1063/1.1643782 10.1063/1.336493 10.1016/S0022-3115(00)00183-5 10.1088/0022-3727/5/1/308 10.1080/10420150215782 10.1016/S0167-2738(02)00759-2 10.1016/S0168-583X(02)00621-3 10.1016/S0167-2738(01)00831-1 10.1088/0953-8984/16/23/014 10.1063/1.1650881 10.1016/S0378-7753(97)02728-6 10.1016/S0955-2219(03)00330-3 10.1016/S0022-3115(99)00041-0 10.1080/01418610110049662 10.1557/JMR.1998.0205 10.1016/S0168-583X(00)00643-1 10.1063/1.1758315 10.1016/S0167-2738(01)01017-7 10.1016/j.nimb.2004.12.050 |
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| Title | Charging kinetics in virgin and 1MeV-electron irradiated yttria-stabilized zirconia in the 300–1000K range |
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