Wide Band Frequency Characterization of Al-Doped and Undoped Rutile TiO 2 Thin Films for MIM Capacitors

In this letter, the dielectric properties of rutile TiO2 thin films are studied for metal-insulator-metal capacitor applications. The dielectric constant, the ac conductivity, and the loss tangent are measured in a wide band frequency range, from 1 Hz to 2 GHz. The effect of aluminum doping, as well...

Full description

Saved in:

Bibliographic Details
Published in:	IEEE electron device letters Vol. 38; no. 3; pp. 375 - 378
Main Authors:	Chaker, Ahmad, Bermond, Cedric, Artillan, Philippe, Gonon, Patrice, Vallee, Christophe, Bsiesy, Ahmad
Format:	Journal Article
Language:	English
Published:	Institute of Electrical and Electronics Engineers 01-03-2017
Subjects:	Physics
Online Access:	Get full text
Tags:	Add Tag No Tags, Be the first to tag this record!

Abstract	In this letter, the dielectric properties of rutile TiO2 thin films are studied for metal-insulator-metal capacitor applications. The dielectric constant, the ac conductivity, and the loss tangent are measured in a wide band frequency range, from 1 Hz to 2 GHz. The effect of aluminum doping, as well as the influence of film thickness, on the dielectric properties is presented.
AbstractList	In this letter, the dielectric properties of rutile TiO2 thin films are studied for metal-insulator-metal capacitor applications. The dielectric constant, the ac conductivity, and the loss tangent are measured in a wide band frequency range, from 1 Hz to 2 GHz. The effect of aluminum doping, as well as the influence of film thickness, on the dielectric properties is presented.
Author	Artillan, Philippe Bsiesy, Ahmad Vallee, Christophe Bermond, Cedric Gonon, Patrice Chaker, Ahmad
Author_xml	– sequence: 1 givenname: Ahmad orcidid: 0000-0001-6881-1270 surname: Chaker fullname: Chaker, Ahmad – sequence: 2 givenname: Cedric surname: Bermond fullname: Bermond, Cedric – sequence: 3 givenname: Philippe surname: Artillan fullname: Artillan, Philippe – sequence: 4 givenname: Patrice surname: Gonon fullname: Gonon, Patrice – sequence: 5 givenname: Christophe surname: Vallee fullname: Vallee, Christophe – sequence: 6 givenname: Ahmad surname: Bsiesy fullname: Bsiesy, Ahmad
BackLink	https://hal.science/hal-01825050$$DView record in HAL
BookMark	eNo9kM9PwjAYhhuDiYDePfbqYfh9a7sfRxwgJCMkBuJxKWsrNWPFbpjgXy8T4ul78-V538MzIL3a1ZqQR4QRIqTP-XQyCgHjURgJLpDdkD4KkQQgItYjfYg5BgwhuiODpvkEQM5j3icf71Zp-iJrRWdefx11XZ5otpNelq329ke21tXUGTqugok7aEU7dFOrv_x2bG2l6dquaEjXO1vTma32DTXO0-ViSTN5kKVtnW_uya2RVaMfrndINrPpOpsH-ep1kY3zoMQwxCCNZITMCKNMDFtuIiETgJJJnZSpYEptU80hZaXEVGNiFIAIGdsKjjKOhWBD8nTZ3cmqOHi7l_5UOGmL-Tgvuh9gEgoQ8I1nFi5s6V3TeG3-CwhFJ7U4Sy06qcVVKvsFxtppdQ
CitedBy_id	crossref_primary_10_1016_j_surfin_2023_103420 crossref_primary_10_1016_j_tsf_2020_138198 crossref_primary_10_1088_1361_6463_acb8c2 crossref_primary_10_1063_1_4986196 crossref_primary_10_1109_TNANO_2019_2915815
Cites_doi	10.1063/1.3687702 10.1116/1.4843515 10.1109/JMEMS.2014.2373493 10.1109/IITC.1999.787134 10.1063/1.3626067 10.1016/j.sse.2011.06.031 10.1002/adma.200701085 10.1109/TCPMT.2011.2182611 10.1109/SMIC.2001.942342 10.1063/1.4954314 10.1038/267673a0 10.1080/00018738700101971 10.1116/1.3659699 10.1109/LED.2005.856708 10.1149/1.2131241 10.1109/LED.2002.802602 10.1016/0022-4596(82)90006-8 10.1109/55.992833 10.1016/S0167-5729(02)00100-0 10.1016/S0169-4332(03)00624-X
ContentType	Journal Article
Copyright	Distributed under a Creative Commons Attribution 4.0 International License
Copyright_xml	– notice: Distributed under a Creative Commons Attribution 4.0 International License
DBID	AAYXX CITATION 1XC
DOI	10.1109/LED.2017.2654513
DatabaseName	CrossRef Hyper Article en Ligne (HAL)
DatabaseTitle	CrossRef
DatabaseTitleList
DeliveryMethod	fulltext_linktorsrc
Discipline	Engineering Physics
EISSN	1558-0563
EndPage	378
ExternalDocumentID	oai_HAL_hal_01825050v1 10_1109_LED_2017_2654513
GroupedDBID	-~X .DC 0R~ 29I 4.4 5GY 5VS 6IK 97E AAJGR AASAJ AAYXX ABQJQ ACGFO ACIWK ACNCT AENEX AETIX AFFNX AI. AIBXA AKJIK ALLEH ALMA_UNASSIGNED_HOLDINGS ATWAV BEFXN BFFAM BGNUA BKEBE BPEOZ CITATION CS3 DU5 EBS EJD HZ~ IBMZZ ICLAB IFIPE IFJZH IPLJI JAVBF LAI M43 O9- OCL P2P RIA RIE RIG RNS TAE TN5 TWZ VH1 1XC
ID	FETCH-LOGICAL-c1221-96a613f5fdf70b4f65a800c3ae8c953ddb9e4093ca19e18fd005233b541a77553
ISSN	0741-3106
IngestDate	Thu Oct 31 07:27:25 EDT 2024 Fri Aug 23 03:01:34 EDT 2024
IsPeerReviewed	true
IsScholarly	true
Issue	3
Language	English
License	Distributed under a Creative Commons Attribution 4.0 International License: http://creativecommons.org/licenses/by/4.0
LinkModel	OpenURL
MergedId	FETCHMERGED-LOGICAL-c1221-96a613f5fdf70b4f65a800c3ae8c953ddb9e4093ca19e18fd005233b541a77553
ORCID	0000-0001-6881-1270 0000-0003-1472-9081 0000-0001-8736-0129
PageCount	4
ParticipantIDs	hal_primary_oai_HAL_hal_01825050v1 crossref_primary_10_1109_LED_2017_2654513
PublicationCentury	2000
PublicationDate	2017-3-00 2017-03
PublicationDateYYYYMMDD	2017-03-01
PublicationDate_xml	– month: 03 year: 2017 text: 2017-3-00
PublicationDecade	2010
PublicationTitle	IEEE electron device letters
PublicationYear	2017
Publisher	Institute of Electrical and Electronics Engineers
Publisher_xml	– name: Institute of Electrical and Electronics Engineers
References	ref13 ref12 ref15 ref14 niknejad (ref2) 2000 ref20 ref11 ref10 ref21 ref1 ref17 ref16 ref19 ref18 ref8 ref7 ref9 ref4 ref3 hu (ref6) 2002; 23 ref5
References_xml	– ident: ref10 doi: 10.1063/1.3687702 – ident: ref15 doi: 10.1116/1.4843515 – ident: ref9 doi: 10.1109/JMEMS.2014.2373493 – ident: ref3 doi: 10.1109/IITC.1999.787134 – ident: ref5 doi: 10.1063/1.3626067 – ident: ref18 doi: 10.1016/j.sse.2011.06.031 – ident: ref14 doi: 10.1002/adma.200701085 – ident: ref16 doi: 10.1109/TCPMT.2011.2182611 – ident: ref1 doi: 10.1109/SMIC.2001.942342 – ident: ref19 doi: 10.1063/1.4954314 – ident: ref20 doi: 10.1038/267673a0 – ident: ref21 doi: 10.1080/00018738700101971 – year: 2000 ident: ref2 publication-title: Design Simulation and Applications of Inductors and Transformers for Si RF ICs contributor: fullname: niknejad – ident: ref7 doi: 10.1116/1.3659699 – ident: ref11 doi: 10.1109/LED.2005.856708 – ident: ref13 doi: 10.1149/1.2131241 – volume: 23 start-page: 514 year: 2002 ident: ref6 article-title: A high performance MIM capacitor using HfO2 dielectrics publication-title: IEEE Electron Device Lett doi: 10.1109/LED.2002.802602 contributor: fullname: hu – ident: ref17 doi: 10.1016/0022-4596(82)90006-8 – ident: ref4 doi: 10.1109/55.992833 – ident: ref12 doi: 10.1016/S0167-5729(02)00100-0 – ident: ref8 doi: 10.1016/S0169-4332(03)00624-X
SSID	ssj0014474
Score	2.2377717
Snippet	In this letter, the dielectric properties of rutile TiO2 thin films are studied for metal-insulator-metal capacitor applications. The dielectric constant, the...
SourceID	hal crossref
SourceType	Open Access Repository Aggregation Database
StartPage	375
SubjectTerms	Physics
Title	Wide Band Frequency Characterization of Al-Doped and Undoped Rutile TiO 2 Thin Films for MIM Capacitors
URI	https://hal.science/hal-01825050
Volume	38
hasFullText	1
inHoldings	1
isFullTextHit
isPrint
link	http://sdu.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwtV1Lj9MwELba5QIHxFMsL1mIC4oCTpzEybH0wSLtggSL4BY5sc1WKm1VdpHg1zNjO062CIk9cIkiK7LSzNeZz-PxfIQ8L0TDtGFNbLQs4kyLKpasNDHEJpYoiB8wjqmLj-Ldl3I2z-ajUSem04_9V0vDGNgaT85ewdphUhiAe7A5XMHqcP0nu39eKh29xnT4YufKpH_aPXXXlflXYIiTVTzbbLXt1ArMU9n7D_BiKxT7eR-lVtIzWixXrmVDdPL2JJpCaG2XKNAzJLW4YIw6PR08hgXOJ1rZc0KBsWP5gBfOPvsmVcgCQGDwwsZTrXbLtgfgOeohrfukzzZA8M1m7WoFnL6AHmYuIBqG0i3v4IDNQAxgvhW2d8B5GQMp40MPzcsBEvnA3XKnuuIjN3diQH8GBdtT9Xg-w0o-8TItgDW6A7CX-2_vxcVQrWjXSayqYYYaZ6j9DGNyLQX35k8Nhr2rLHO9v7tf122Os-rV_jtcIkPjsy6Xb7nN6S1y0y9K6MSh6TYZ6fUdcmPQqvIu-Yq4oogrGnBF93FFN4Z2uKL4qMcVdbiigCuaUsQVtbiigCsKuKI9ru6RT4v56fQo9iIdcZukWN5TSPxH50YZwZrMFLmENUjLpS7bKudKNZXOWMVbmVQ6KY2yGxG8ybNECpHn_D45ANDoB4Q2qdZcipJp4PUSmDPLS67KzGQpU0JXh-RF97XqrevFUv_NNofkGXzO8Bg2UT-aHNc4xmBJDbyf_UgeXmHCR-R6j-HH5OB8d6GfkPF3dfHUmv83q0SElA
link.rule.ids	230,315,782,786,887,27933,27934
linkProvider	IEEE
openUrl	ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Wide+Band+Frequency+Characterization+of+Al-Doped+and+Undoped+Rutile+TiO+2+Thin+Films+for+MIM+Capacitors&rft.jtitle=IEEE+electron+device+letters&rft.au=Chaker%2C+Ahmad&rft.au=Bermond%2C+Cedric&rft.au=Artillan%2C+Philippe&rft.au=Gonon%2C+Patrice&rft.date=2017-03-01&rft.issn=0741-3106&rft.eissn=1558-0563&rft.volume=38&rft.issue=3&rft.spage=375&rft.epage=378&rft_id=info:doi/10.1109%2FLED.2017.2654513&rft.externalDBID=n%2Fa&rft.externalDocID=10_1109_LED_2017_2654513
thumbnail_l	http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0741-3106&client=summon
thumbnail_m	http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0741-3106&client=summon
thumbnail_s	http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0741-3106&client=summon