221 nm far ultraviolet-C AlGaN laser diode with optimized p-AlN electron blocking epilayers
The optical characteristics of far ultraviolet-C (FUV) laser diode (LD), with optimized position of AlN electron blocking layer (EBL), is shown to enhance carrier injection into the multiquantum well region. The carrier behavior mechanism of FUV LDs is illustrated through the simulation results. The...
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| Published in: | Optical and quantum electronics Vol. 56; no. 12 |
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| Abstract | The optical characteristics of far ultraviolet-C (FUV) laser diode (LD), with optimized position of AlN electron blocking layer (EBL), is shown to enhance carrier injection into the multiquantum well region. The carrier behavior mechanism of FUV LDs is illustrated through the simulation results. The optimization of AlN EBL position, in the p-region of the FUV LD, is studied in this work. FUV LD with p-AlN EBL, between last quantum barrier and p-waveguide, show an improved gain profile and stimulated emission. The optical power of this FUV LD has been found to have increased markedly. All our FUV LDs are emitting far ultraviolet-C emission i.e., 221 nm. To the best of our knowledge, 221 nm AlGaN LDs are hardly reported in the literature. Therefore, we believe our work on 221 nm AlGaN far ultraviolet-C laser diode will open new avenues for the research community. |
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| AbstractList | The optical characteristics of far ultraviolet-C (FUV) laser diode (LD), with optimized position of AlN electron blocking layer (EBL), is shown to enhance carrier injection into the multiquantum well region. The carrier behavior mechanism of FUV LDs is illustrated through the simulation results. The optimization of AlN EBL position, in the p-region of the FUV LD, is studied in this work. FUV LD with p-AlN EBL, between last quantum barrier and p-waveguide, show an improved gain profile and stimulated emission. The optical power of this FUV LD has been found to have increased markedly. All our FUV LDs are emitting far ultraviolet-C emission i.e., 221 nm. To the best of our knowledge, 221 nm AlGaN LDs are hardly reported in the literature. Therefore, we believe our work on 221 nm AlGaN far ultraviolet-C laser diode will open new avenues for the research community. The optical characteristics of far ultraviolet-C (FUV) laser diode (LD), with optimized position of AlN electron blocking layer (EBL), is shown to enhance carrier injection into the multiquantum well region. The carrier behavior mechanism of FUV LDs is illustrated through the simulation results. The optimization of AlN EBL position, in the p-region of the FUV LD, is studied in this work. FUV LD with p-AlN EBL, between last quantum barrier and p-waveguide, show an improved gain profile and stimulated emission. The optical power of this FUV LD has been found to have increased markedly. All our FUV LDs are emitting far ultraviolet-C emission i.e., 221 nm. To the best of our knowledge, 221 nm AlGaN LDs are hardly reported in the literature. Therefore, we believe our work on 221 nm AlGaN far ultraviolet-C laser diode will open new avenues for the research community. |
| ArticleNumber | 1905 |
| Author | Bashir, Jamshad Shakir, Syeda Wageeha Usman, Muhammad Noor, Zoya Habib, Usman Ali, Shazma |
| Author_xml | – sequence: 1 givenname: Syeda Wageeha surname: Shakir fullname: Shakir, Syeda Wageeha organization: Faculty of Engineering Sciences, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology – sequence: 2 givenname: Muhammad surname: Usman fullname: Usman, Muhammad email: m.usman@giki.edu.pk organization: Faculty of Engineering Sciences, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology – sequence: 3 givenname: Usman surname: Habib fullname: Habib, Usman organization: Faculty of Engineering Sciences, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology – sequence: 4 givenname: Shazma surname: Ali fullname: Ali, Shazma organization: Faculty of Engineering Sciences, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology – sequence: 5 givenname: Jamshad surname: Bashir fullname: Bashir, Jamshad organization: Faculty of Engineering Sciences, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology – sequence: 6 givenname: Zoya surname: Noor fullname: Noor, Zoya organization: Faculty of Engineering Sciences, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology |
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| Keywords | Simulations Recombination rate Efficiency Laser diode Electron blocking layer Far ultraviolet-C Gain AlGaN Threshold |
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| SubjectTerms | Aluminum gallium nitrides Aluminum nitride Carrier injection Characterization and Evaluation of Materials Computer Communication Networks Electrical Engineering Far ultraviolet radiation Lasers Optical Devices Optical properties Optics Photonics Physics Physics and Astronomy Semiconductor lasers Stimulated emission Waveguides |
| Title | 221 nm far ultraviolet-C AlGaN laser diode with optimized p-AlN electron blocking epilayers |
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