Multilayer AIN/AlGaN/GaN/AlGaN heterostructures with quantum wells for high-power field-effect transistors grown by ammonia MBE

Multilayer AIN/AlGaN/GaN/AlGaN heterostructures with quantum wells for high-power field-effect transistors grown by ammonia MBE

Saved in:
Bibliographic Details
Published in:Technical physics letters Vol. 32; no. 11; pp. 960 - 963
Main Authors: Alekseev, A. N., Aleksandrov, S. B., Byrnaz, A. É., Velikovskiĭ, L. É., Velikovskiĭ, I. É., Veretekha, A. V., Krasovitskiĭ, D. M., Pavlenko, M. V., Petrov, S. I., Pogorel’skiĭ, M. Yu, Pogorel’skiĭ, Yu. V., Sokolov, I. A., Sokolov, M. A., Stepanov, M. V., Tkachenko, A. G., Shkurko, A. P., Chalyĭ, V. P.
Format: Journal Article
Language:English
Published: 01-11-2006
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
ISSN:1063-7850
1090-6533
DOI:10.1134/S1063785006110162