Erratum: “Structure of stacking faults formed during the forward bias of 4H-SiC p-i-n diodes” [Appl. Phys. Lett. 82 , 2410 (2003)]

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Bibliographic Details
Published in:	Applied physics letters Vol. 84; no. 23; p. 4816
Main Authors:	Twigg, M. E., Stahlbush, R. E., Fatemi, M., Arthur, S. D., Fedison, J. B., Tucker, J. E., Wang, S.
Format:	Journal Article
Language:	English
Published:	07-06-2004
Online Access:	Get full text
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