512 \,\times\,512 Individually Addressable MWIR LED Arrays Based on Type-II InAs/GaSb Superlattices

512 \,\times\,512 Individually Addressable MWIR LED Arrays Based on Type-II InAs/GaSb Superlattices

Single element 33×33 μm 2 InAs/GaSb superlattice light-emitting diodes (SLEDs) operating at 77 K with peak emission at approximately 4.6 μm are demonstrated. A peak radiance of 2.2 W/cm 2 /sr was measured corresponding to an apparent temperature greater than 1350 K within the 3-5 μm band. A 48 μm pi...

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Bibliographic Details
Published in:IEEE journal of quantum electronics Vol. 49; no. 9; pp. 753 - 759
Main Authors: Norton, Dennis T., Olesberg, Jonathon T., McGee, Rodney T., Waite, Nicholas A., Dickason, Jonathan, Goossen, K. W., Lawler, John, Sullivan, Gerry, Ikhlassi, Amal, Kiamilev, Fouad, Koerperick, Edwin J., Murray, Lee M., Prineas, John P., Boggess, Thomas F.
Format: Journal Article
Language:English
Published: IEEE 01-09-2013
Subjects:
Array
Cameras
Cathodes
Fabrication
infrared projection
mid-wave infrared light-emitting diode
Superlattices
Superluminescent diodes
Temperature measurement
type-II superlattice
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Description
Summary:Single element 33×33 μm 2 InAs/GaSb superlattice light-emitting diodes (SLEDs) operating at 77 K with peak emission at approximately 4.6 μm are demonstrated. A peak radiance of 2.2 W/cm 2 /sr was measured corresponding to an apparent temperature greater than 1350 K within the 3-5 μm band. A 48 μm pitch, 512 × 512 individually addressable LED array was fabricated from a nominally identical SLED wafer, hybridized with a read-in integrated circuit, and tested. The array exhibited a pixel yield greater than 95%.
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.2013.2272878