Improved Gas Sensing Capabilities of MoS 2 /Diamond Heterostructures at Room Temperature

• Published in: ACS applied materials & interfaces Vol. 15; no. 28; pp. 34206 - 34214
• Main Authors: Kočí, Michal, Izsák, Tibor, Vanko, Gabriel, Sojková, Michaela, Hrdá, Jana, Szabó, Ondrej, Husák, Miroslav, Végsö, Karol, Varga, Marian, Kromka, Alexander
• Format: Journal Article
• Language: English
• Published: United States 19-07-2023
• Subjects: P−N junction; H-terminated diamond; room temperature; MoS2; gas sensors; MoS2/H-NCD heterostructure; sensitivity; gas interaction model
• ISSN: 1944-8244; 1944-8252
• DOI: 10.1021/acsami.3c04438

Molybdenum disulfide (MoS
) and nanocrystalline diamond (NCD) have attracted considerable attention due to their unique electronic structure and extraordinary physical and chemical properties in many applications, including sensor devices in gas sensing applications. Combining MoS
and H-terminated NCD (H-NCD) in a heterostructure design can improve the sensing performance due to their mutual advantages. In this study, the synthesis of MoS
and H-NCD thin films using appropriate physical/chemical deposition methods and their analysis in terms of gas sensing properties in their individual and combined forms are demonstrated. The sensitivity and time domain characteristics of the sensors were investigated for three gases: oxidizing NO
, reducing NH
, and neutral synthetic air. It was observed that the MoS
/H-NCD heterostructure-based gas sensor exhibits improved sensitivity to oxidizing NO
(0.157%·ppm
) and reducing NH
(0.188%·ppm
) gases compared to pure active materials (pure MoS
achieves responses of 0.018%·ppm
for NO
and -0.0072%·ppm
for NH
, respectively, and almost no response for pure H-NCD at room temperature). Different gas interaction model pathways were developed to describe the current flow mechanism through the sensing area with/without the heterostructure. The gas interaction model independently considers the influence of each material (chemisorption for MoS
and surface doping mechanism for H-NCD) as well as the current flow mechanism through the formed P-N heterojunction.