Plasma-deposited fluoropolymer film mask for local porous silicon formation

• Published in: Nanoscale research letters Vol. 7; no. 1; p. 344
• Main Authors: Defforge, Thomas, Capelle, Marie, Tran-Van, François, Gautier, Gaël
• Format: Journal Article
• Language: English
• Published: New York Springer New York 26-06-2012; BioMed Central Ltd; SpringerOpen; Springer
• Subjects: Chemistry and Materials Science; Engineering Sciences; Materials Science; Micro and nanotechnologies; Microelectronics; Molecular Medicine; Nano Express; Nanochemistry; Nanoscale Science and Technology; Nanotechnology; Nanotechnology and Microengineering; Porous Semiconductors - Science and Technology 2012; Inert masking layer; Fluorocarbon polymer; Chemical resistance; Fluoropolymer; Porous silicon localization
• ISSN: 1556-276X; 1931-7573; 1556-276X
• DOI: 10.1186/1556-276X-7-344

The study of an innovative fluoropolymer masking layer for silicon anodization is proposed. Due to its high chemical resistance to hydrofluoric acid even under anodic bias, this thin film deposited by plasma has allowed the formation of deep porous silicon regions patterned on the silicon wafer. Unlike most of other masks, fluoropolymer removal after electrochemical etching is rapid and does not alter the porous layer. Local porous regions were thus fabricated both in p
+
-type and low-doped n-type silicon substrates.