Cavity enhanced emission from a silicon T center

• Main Authors: Islam, Fariba, Lee, Chang-Min, Harper, Samuel, Rahaman, Mohammad Habibur, Zhao, Yuqi, Vij, Neelesh Kumar, Waks, Edo
• Format: Journal Article
• Language: English
• Published: 25-10-2023
• Subjects: Physics - Optics; Physics - Quantum Physics
• DOI: 10.48550/arxiv.2310.13808

Nano Lett. 2024, 24, 1, 319 Silicon T centers present the promising possibility to generate optically
active spin qubits in an all-silicon device. However, these color centers
exhibit long excited state lifetimes and a low Debye-Waller factor, making them
dim emitters with low efficiency into the zero-phonon line. Nanophotonic
cavities can solve this problem by enhancing radiative emission into the
zero-phonon line through the Purcell effect. In this work we demonstrate
cavity-enhanced emission from a single T center in a nanophotonic cavity. We
achieve a two-orders of magnitude increase in brightness of the zero-phonon
line relative to waveguide-coupled emitters, a 23% collection efficiency from
emitter to fiber, and an overall emission efficiency into the zero-phonon line
of 63.4%. We also observe a lifetime enhancement of 5, corresponding to a
Purcell factor exceeding 18 when correcting for the emission to the phonon
sideband. These results pave the way towards efficient spin-photon interfaces
in silicon photonics.