Doping-induced magnetism in the semiconducting B20 compound RuGe

• Main Authors: Khan, Mojammel A, Young, D. P, Adams, P. W, Browne, D, Gautreau, D. M, Phelan, W. Adam, Cao, Huibo, DiTusa, J. F
• Format: Journal Article
• Language: English
• Published: 15-03-2018
• Subjects: Physics - Materials Science
• DOI: 10.48550/arxiv.1803.05585

RuGe, a diamagnetic small-band gap semiconductor, and CoGe, a nonmagnetic
semimetal, are both isostructural to the Kondo insulator FeSi and the skyrmion
lattice host MnSi. Here, we have explored the magnetic and transport properties
of Co-doped RuGe: Ru$_{1-x}$Co$_x$Ge. For small values of $x$, a magnetic
ground state emerges with $T_{c}\approx$ 5 $-$ 9 K, which is accompanied by a
moderate decrease in electrical resistivity and a Seebeck coefficient that
indicates electron-like charge carriers. The magnetization, magnetoresistance,
and the specific heat capacity all resemble that of Fe$_{1-x}$Co$_x$Si for
similar Co substitution levels, suggesting that Ru$_{1-x}$Co$_x$Ge hosts
equally as interesting magnetic and charge carrier transport properties.