Impact of Top SiO2 interlayer Thickness on Memory Window of Si Channel FeFET with TiN/SiO2/Hf0.5Zr0.5O2/SiOx/Si (MIFIS) Gate Structure

Impact of Top SiO2 interlayer Thickness on Memory Window of Si Channel FeFET with TiN/SiO2/Hf0.5Zr0.5O2/SiOx/Si (MIFIS) Gate Structure

We study the impact of top SiO2 interlayer thickness on memory window of Si channel FeFET with TiN/SiO2/Hf0.5Zr0.5O2/SiOx/Si (MIFIS) gate structure. The memory window increases with thicker top SiO2. We realize the memory window of 6.3 V for 3.4 nm top SiO2. Moreover, we find that the endurance char...

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Bibliographic Details
Main Authors: Hu, Tao, Shao, Xianzhou, Bai, Mingkai, Jia, Xinpei, Dai, Saifei, Sun, Xiaoqing, Han, Runhao, Yang, Jia, Ke, Xiaoyu, Tian, Fengbin, Yang, Shuai, Chai, Junshuai, Xu, Hao, Wang, Xiaolei, Wang, Wenwu, Ye, Tianchun
Format: Journal Article
Language:English
Published: 24-04-2024
Subjects:
Physics - Applied Physics
Online Access:Get full text
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Summary:We study the impact of top SiO2 interlayer thickness on memory window of Si channel FeFET with TiN/SiO2/Hf0.5Zr0.5O2/SiOx/Si (MIFIS) gate structure. The memory window increases with thicker top SiO2. We realize the memory window of 6.3 V for 3.4 nm top SiO2. Moreover, we find that the endurance characteristic degrades with increasing the initial memory window.
DOI:10.48550/arxiv.2404.15825