Spin Polarization in a AlGaAs/GaAs Quantum Point Contact with in-plane side gates

Spin Polarization in a AlGaAs/GaAs Quantum Point Contact with in-plane side gates

We report the observation of an anomalous conductance plateau near G = 0.5 G0 (G0 = 2e2/h) in asymmetrically biased AlGaAs/GaAs quantum point contacts (QPCs), with in-plane side gates in the presence of lateral spin-orbit coupling. This is a signature of spin polarization in the narrow portion of th...

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Bibliographic Details
Main Authors: Bhandari, N, Das, P. P, Cahay, M, Newrock, R. S, Herbert, S. T
Format: Journal Article
Language:English
Published: 20-04-2012
Subjects:
Physics - Mesoscale and Nanoscale Physics
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Summary:We report the observation of an anomalous conductance plateau near G = 0.5 G0 (G0 = 2e2/h) in asymmetrically biased AlGaAs/GaAs quantum point contacts (QPCs), with in-plane side gates in the presence of lateral spin-orbit coupling. This is a signature of spin polarization in the narrow portion of the QPC. The appearance and evolution of the conductance anomaly has been studied at T=4.2K as a function of the potential asymmetry between the side gates. The observation of spontaneous spin polarization in a side-gated GaAs QPC could eventually lead to the realization of an all-electric spin-valve at tens of degrees Kelvin.
DOI:10.48550/arxiv.1204.4729