Realization of Ultrahigh Quality InGaN Platelets to be Used as Relaxed Templates for Red Micro-LEDs

• Published in: ACS applied materials & interfaces Vol. 12; no. 15; pp. 17845 - 17851
• Main Authors: Bi, Zhaoxia, Lu, Taiping, Colvin, Jovana, Sjögren, Elis, Vainorius, Neimantas, Gustafsson, Anders, Johansson, Jonas, Timm, Rainer, Lenrick, Filip, Wallenberg, Reine, Monemar, Bo, Samuelson, Lars
• Format: Journal Article
• Language: English
• Published: United States American Chemical Society 15-04-2020
• Subjects: chemical mechanical polishing; Condensed Matter Physics; Den kondenserade materiens fysik; Fysik; InGaN; micro-LEDs; Natural Sciences; Naturvetenskap; Physical Sciences; selective area growth; template; vapor phase epitaxy; template; InGaN; micro-LEDs; chemical mechanical polishing; selective area growth; vapor phase epitaxy
• ISSN: 1944-8244; 1944-8252; 1944-8252
• DOI: 10.1021/acsami.0c00951

In this work, arrays of predominantly relaxed InGaN platelets with indium contents of up to 18%, free from dislocations and offering a smooth top c-plane, are presented. The InGaN platelets are grown by metal–organic vapor phase epitaxy on a dome-like InGaN surface formed by chemical mechanical polishing of InGaN pyramids defined by 6 equivalent {101̅1} planes. The dome-like surface is flattened during growth, through the formation of bunched steps, which are terminated when reaching the inclined {101̅1} planes. The continued growth takes place on the flattened top c-plane with single bilayer surface steps initiated at the six corners between the c-plane and the inclined {101̅1} planes, leading to the formation of high-quality InGaN layers. The top c-plane of the as-formed InGaN platelets can be used as a high-quality template for red micro light-emitting diodes.