Integrated Water-Level Sensor Using Thin-Film Transistor Technology

• Published in: ACS omega Vol. 8; no. 40; pp. 36868 - 36875
• Main Authors: Moon, Seung Jae, Han, Ye Lin, Hwang, Sang Ho, Kang, Seo Jin, Lee, Jong Mo, Bae, Byung Seong
• Format: Journal Article
• Language: English
• Published: American Chemical Society 10-10-2023
• ISSN: 2470-1343; 2470-1343
• DOI: 10.1021/acsomega.3c03914

A low-cost water-level sensor was developed utilizing a capacitive sensor design with only one thin-film transistor (TFT). The integration of the a-IGZO TFT process facilitated the complete integration of the water-level sensor on a substrate, including essential components, such as the transistor, capacitor, wires, and sensing electrode. This integration eliminates the need for a separate mounting process, resulting in a robust sensor assembly. To comprehensively assess the performance of the developed water-level sensor, rigorous evaluations were conducted using both MOSFET and TFT integration. In the case of the water-level sensor featuring a-IGZO TFT integration, a voltage output of 4.2 V was measured when the tank was empty, while a voltage output of 0.9 V was measured when the tank was full. Notably, the integrated sensor system demonstrated a higher output voltage compared with the MOSFET sensor, primarily due to the significantly reduced parasitic capacitance of the TFT. The use of a-IGZO TFT in the integrated sensor system contributes to enhanced sensitivity and accuracy. The lower parasitic capacitance inherent in TFT technology allows for improved voltage measurement precision, resulting in more reliable and precise water-level sensing capability. The development of this integrated water-level sensor holds immense potential for a wide range of applications that require a combination of cost-effectiveness, accurate monitoring, and flexibility in form factor. With its affordability, the sensor is accessible for various industries and applications.