Light Modulation in Silicon Photonics by PZT Actuated Acoustic Waves
Tailoring the interaction between light and sound has opened new possibilities in photonic integrated circuits (PICs) that range from achieving quantum control of light to high-speed information processing. However, the actuation of sound waves in Si PICs usually requires integration of a piezoelect...
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Published in: | ACS photonics Vol. 9; no. 6; pp. 1944 - 1953 |
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15-06-2022
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Abstract | Tailoring the interaction between light and sound has opened new possibilities in photonic integrated circuits (PICs) that range from achieving quantum control of light to high-speed information processing. However, the actuation of sound waves in Si PICs usually requires integration of a piezoelectric thin film. Lead zirconate titanate (PZT) is a promising material due to its strong piezoelectric and electromechanical coupling coefficient. Unfortunately, the traditional methods to grow PZT on silicon are detrimental for photonic applications due to the presence of an optical lossy intermediate layer. In this work, we report integration of a high quality PZT thin film on a silicon-on-insulator (SOI) photonic chip using an optically transparent buffer layer. We demonstrate acousto-optic modulation in silicon waveguides with the PZT actuated acoustic waves. We fabricate interdigital transducers (IDTs) on the PZT film with a contact photolithography and electron-beam lithography to generate the acoustic waves in MHz and GHz ranges, respectively. We obtain a V π L ∼ 3.35 V·cm at 576 MHz from a 350 nm thick gold (Au) IDT with 20 finger-pairs. After taking the effect of mass-loading and grating reflection into account, we measured a V π L ∼ 3.60 V·cm at 2 GHz from a 100 nm thick aluminum (Al) IDT consisting of only four finger-pairs. Thus, without patterning the PZT film nor suspending the device, we obtained figures-of-merit comparable to state-of-the-art modulators based on SOI, making it a promising candidate for a broadband and efficient acousto-optic modulator for future integration. |
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AbstractList | Tailoring the interaction between light and sound has opened new possibilities in photonic integrated circuits (PICs) that range from achieving quantum control of light to high-speed information processing. However, the actuation of sound waves in Si PICs usually requires integration of a piezoelectric thin film. Lead zirconate titanate (PZT) is a promising material due to its strong piezoelectric and electromechanical coupling coefficient. Unfortunately, the traditional methods to grow PZT on silicon are detrimental for photonic applications due to the presence of an optical lossy intermediate layer. In this work, we report integration of a high quality PZT thin film on a silicon-on-insulator (SOI) photonic chip using an optically transparent buffer layer. We demonstrate acousto-optic modulation in silicon waveguides with the PZT actuated acoustic waves. We fabricate interdigital transducers (IDTs) on the PZT film with a contact photolithography and electron-beam lithography to generate the acoustic waves in MHz and GHz ranges, respectively. We obtain a
∼ 3.35 V·cm at 576 MHz from a 350 nm thick gold (Au) IDT with 20 finger-pairs. After taking the effect of mass-loading and grating reflection into account, we measured a
∼ 3.60 V·cm at 2 GHz from a 100 nm thick aluminum (Al) IDT consisting of only four finger-pairs. Thus, without patterning the PZT film nor suspending the device, we obtained figures-of-merit comparable to state-of-the-art modulators based on SOI, making it a promising candidate for a broadband and efficient acousto-optic modulator for future integration. Tailoring the interaction between light and sound has opened new possibilities in photonic integrated circuits (PICs) that range from achieving quantum control of light to high-speed information processing. However, the actuation of sound waves in Si PICs usually requires integration of a piezoelectric thin film. Lead zirconate titanate (PZT) is a promising material due to its strong piezoelectric and electromechanical coupling coefficient. Unfortunately, the traditional methods to grow PZT on silicon are detrimental for photonic applications due to the presence of an optical lossy intermediate layer. In this work, we report integration of a high quality PZT thin film on a silicon-on-insulator (SOI) photonic chip using an optically transparent buffer layer. We demonstrate acousto-optic modulation in silicon waveguides with the PZT actuated acoustic waves. We fabricate interdigital transducers (IDTs) on the PZT film with a contact photolithography and electron-beam lithography to generate the acoustic waves in MHz and GHz ranges, respectively. We obtain a V π L ∼ 3.35 V·cm at 576 MHz from a 350 nm thick gold (Au) IDT with 20 finger-pairs. After taking the effect of mass-loading and grating reflection into account, we measured a V π L ∼ 3.60 V·cm at 2 GHz from a 100 nm thick aluminum (Al) IDT consisting of only four finger-pairs. Thus, without patterning the PZT film nor suspending the device, we obtained figures-of-merit comparable to state-of-the-art modulators based on SOI, making it a promising candidate for a broadband and efficient acousto-optic modulator for future integration. Tailoring the interaction between light and sound has opened new possibilities in photonic integrated circuits (PICs) that range from achieving quantum control of light to high-speed information processing. However, the actuation of sound waves in Si PICs usually requires integration of a piezoelectric thin film. Lead zirconate titanate (PZT) is a promising material due to its strong piezoelectric and electromechanical coupling coefficient. Unfortunately, the traditional methods to grow PZT on silicon are detrimental for photonic applications due to the presence of an optical lossy intermediate layer. In this work, we report integration of a high quality PZT thin film on a silicon-on-insulator (SOI) photonic chip using an optically transparent buffer layer. We demonstrate acousto-optic modulation in silicon waveguides with the PZT actuated acoustic waves. We fabricate interdigital transducers (IDTs) on the PZT film with a contact photolithography and electron-beam lithography to generate the acoustic waves in MHz and GHz ranges, respectively. We obtain a V π L ∼ 3.35 V·cm at 576 MHz from a 350 nm thick gold (Au) IDT with 20 finger-pairs. After taking the effect of mass-loading and grating reflection into account, we measured a V π L ∼ 3.60 V·cm at 2 GHz from a 100 nm thick aluminum (Al) IDT consisting of only four finger-pairs. Thus, without patterning the PZT film nor suspending the device, we obtained figures-of-merit comparable to state-of-the-art modulators based on SOI, making it a promising candidate for a broadband and efficient acousto-optic modulator for future integration. |
Author | Ansari, Irfan Van Thourhout, Dries Van de Veire, Tessa Pandey, Awanish George, John P. Feutmba, Gilles F. Beeckman, Jeroen |
AuthorAffiliation | Photonics Research Group, INTEC Ghent University-IMEC Centre for Nano and Bio-photonics Liquid Crystal and Photonics Group, ELIS |
AuthorAffiliation_xml | – name: Centre for Nano and Bio-photonics – name: Liquid Crystal and Photonics Group, ELIS – name: Photonics Research Group, INTEC – name: Ghent University-IMEC |
Author_xml | – sequence: 1 givenname: Irfan surname: Ansari fullname: Ansari, Irfan organization: Liquid Crystal and Photonics Group, ELIS – sequence: 2 givenname: John P. surname: George fullname: George, John P. organization: Liquid Crystal and Photonics Group, ELIS – sequence: 3 givenname: Gilles F. surname: Feutmba fullname: Feutmba, Gilles F. organization: Liquid Crystal and Photonics Group, ELIS – sequence: 4 givenname: Tessa surname: Van de Veire fullname: Van de Veire, Tessa organization: Liquid Crystal and Photonics Group, ELIS – sequence: 5 givenname: Awanish surname: Pandey fullname: Pandey, Awanish organization: Ghent University-IMEC – sequence: 6 givenname: Jeroen orcidid: 0000-0002-0711-2465 surname: Beeckman fullname: Beeckman, Jeroen organization: Liquid Crystal and Photonics Group, ELIS – sequence: 7 givenname: Dries orcidid: 0000-0003-0111-431X surname: Van Thourhout fullname: Van Thourhout, Dries email: dries.vanthourhout@UGent.be organization: Ghent University-IMEC |
BackLink | https://www.ncbi.nlm.nih.gov/pubmed/35726237$$D View this record in MEDLINE/PubMed |
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CitedBy_id | crossref_primary_10_1109_LPT_2023_3334752 crossref_primary_10_1364_PRJ_517719 crossref_primary_10_1039_D3TC01046E crossref_primary_10_1021_acsphotonics_4c00022 |
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Keywords | acousto-optic modulator PZT silicon photonics optomechanics surface acoustic wave |
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Snippet | Tailoring the interaction between light and sound has opened new possibilities in photonic integrated circuits (PICs) that range from achieving quantum control... Tailoring the interaction between light and sound has opened new possibilities in photonic integrated circuits (PICs) that range from achieving quantum control... |
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Title | Light Modulation in Silicon Photonics by PZT Actuated Acoustic Waves |
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