Lithography-Free Fabrication of Core–Shell GaAs Nanowire Tunnel Diodes

Lithography-Free Fabrication of Core–Shell GaAs Nanowire Tunnel Diodes

GaAs core–shell p–n junction tunnel diodes were demonstrated by combining vapor–liquid–solid growth with gallium oxide deposition by atomic layer deposition for electrical isolation. The characterization of an ensemble of core–shell structures was enabled by the use of a tungsten probe in a scanning...

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Bibliographic Details
Published in:Nano letters Vol. 15; no. 8; pp. 5408 - 5413
Main Authors: Darbandi, A, Kavanagh, K. L, Watkins, S. P
Format: Journal Article
Language:English
Published: United States American Chemical Society 12-08-2015
Subjects:
Core-shell structure
Current density
Deposition
Gallium arsenide
Gallium arsenides
Nanowires
Scanning electron microscopy
Tunnel diodes
tunnel diodes
core−shell
GaAs
nanowire
metalorganic vapor phase epitaxy
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Summary:GaAs core–shell p–n junction tunnel diodes were demonstrated by combining vapor–liquid–solid growth with gallium oxide deposition by atomic layer deposition for electrical isolation. The characterization of an ensemble of core–shell structures was enabled by the use of a tungsten probe in a scanning electron microscope without the need for lithographic processing. Radial tunneling transport was observed, exhibiting negative differential resistance behavior with peak-to-valley current ratios of up to 3.1. Peak current densities of up to 2.1 kA/cm2 point the way to applications in core–shell photovoltaics and tunnel field effect transistors.
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ISSN:1530-6984
1530-6992
DOI:10.1021/acs.nanolett.5b01795