Enhanced Multiple Exciton Generation in Quasi-One-Dimensional Semiconductors

The creation of a single electron–hole pair (i.e., exciton) per incident photon is a fundamental limitation for current optoelectronic devices including photodetectors and photovoltaic cells. The prospect of multiple exciton generation per incident photon is of great interest to fundamental science...

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Bibliographic Details
Published in:Nano letters Vol. 11; no. 8; pp. 3476 - 3481
Main Authors: Cunningham, Paul D, Boercker, Janice E, Foos, Edward E, Lumb, Matthew P, Smith, Anthony R, Tischler, Joseph G, Melinger, Joseph S
Format: Journal Article
Language:English
Published: Washington, DC American Chemical Society 10-08-2011
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Summary:The creation of a single electron–hole pair (i.e., exciton) per incident photon is a fundamental limitation for current optoelectronic devices including photodetectors and photovoltaic cells. The prospect of multiple exciton generation per incident photon is of great interest to fundamental science and the improvement of solar cell technology. Multiple exciton generation is known to occur in semiconductor nanostructures with increased efficiency and reduced threshold energy compared to their bulk counterparts. Here we report a significant enhancement of multiple exciton generation in PbSe quasi-one-dimensional semiconductors (nanorods) over zero-dimensional nanostructures (nanocrystals), characterized by a 2-fold increase in efficiency and reduction of the threshold energy to (2.23 ± 0.03)E g, which approaches the theoretical limit of 2Eg. Photovoltaic cells based on PbSe nanorods are capable of improved power conversion efficiencies, in particular when operated in conjunction with solar concentrators.
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ISSN:1530-6984
1530-6992
DOI:10.1021/nl202014a