Enhanced Multiple Exciton Generation in Quasi-One-Dimensional Semiconductors
The creation of a single electron–hole pair (i.e., exciton) per incident photon is a fundamental limitation for current optoelectronic devices including photodetectors and photovoltaic cells. The prospect of multiple exciton generation per incident photon is of great interest to fundamental science...
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Published in: | Nano letters Vol. 11; no. 8; pp. 3476 - 3481 |
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Main Authors: | , , , , , , |
Format: | Journal Article |
Language: | English |
Published: |
Washington, DC
American Chemical Society
10-08-2011
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Subjects: | |
Online Access: | Get full text |
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Summary: | The creation of a single electron–hole pair (i.e., exciton) per incident photon is a fundamental limitation for current optoelectronic devices including photodetectors and photovoltaic cells. The prospect of multiple exciton generation per incident photon is of great interest to fundamental science and the improvement of solar cell technology. Multiple exciton generation is known to occur in semiconductor nanostructures with increased efficiency and reduced threshold energy compared to their bulk counterparts. Here we report a significant enhancement of multiple exciton generation in PbSe quasi-one-dimensional semiconductors (nanorods) over zero-dimensional nanostructures (nanocrystals), characterized by a 2-fold increase in efficiency and reduction of the threshold energy to (2.23 ± 0.03)E g, which approaches the theoretical limit of 2Eg. Photovoltaic cells based on PbSe nanorods are capable of improved power conversion efficiencies, in particular when operated in conjunction with solar concentrators. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 1530-6984 1530-6992 |
DOI: | 10.1021/nl202014a |