Single Domain 3C-SiC Growth on Off-Oriented 4H-SiC Substrates

• Published in: Crystal growth & design Vol. 15; no. 6; pp. 2940 - 2947
• Main Authors: Jokubavicius, Valdas, Yazdi, Gholam R, Liljedahl, Rickard, Ivanov, Ivan G, Sun, Jianwu, Liu, Xinyu, Schuh, Philipp, Wilhelm, Martin, Wellmann, Peter, Yakimova, Rositsa, Syväjärvi, Mikael
• Format: Journal Article
• Language: English
• Published: American Chemical Society 03-06-2015
• ISSN: 1528-7483; 1528-7505; 1528-7505
• DOI: 10.1021/acs.cgd.5b00368

We investigated the formation of structural defects in thick (∼1 mm) cubic silicon carbide (3C-SiC) layers grown on off-oriented 4H-SiC substrates via a lateral enlargement mechanism using different growth conditions. A two-step growth process based on this technique was developed, which provides a trade-off between the growth rate and the number of defects in the 3C-SiC layers. Moreover, we demonstrated that the two-step growth process combined with a geometrically controlled lateral enlargement mechanism allows the formation of a single 3C-SiC domain which enlarges and completely covers the substrate surface. High crystalline quality of the grown 3C-SiC layers is confirmed using high resolution X-ray diffraction and low temperature photoluminescence measurements.