Direct Electrodeposition of Crystalline Silicon at Low Temperatures

• Published in: Journal of the American Chemical Society Vol. 135; no. 5; pp. 1684 - 1687
• Main Authors: Gu, Junsi, Fahrenkrug, Eli, Maldonado, Stephen
• Format: Journal Article
• Language: English
• Published: United States American Chemical Society 06-02-2013
• ISSN: 0002-7863; 1520-5126
• DOI: 10.1021/ja310897r

An electrochemical liquid–liquid–solid (ec-LLS) process that yields crystalline silicon at low temperature (80 °C) without any physical or chemical templating agent has been demonstrated. Electroreduction of dissolved SiCl4 in propylene carbonate using a liquid gallium [Ga(l)] pool as the working electrode consistently yielded crystalline Si. X-ray diffraction and electron diffraction data separately indicated that the as-deposited materials were crystalline with the expected patterns for a diamond cubic crystal structure. Scanning and transmission electron microscopies further revealed the as-deposited materials (i.e., with no annealing) to be faceted nanocrystals with diameters in excess of 500 nm. Energy-dispersive X-ray spectra further showed no evidence of any other species within the electrodeposited crystalline Si. Raman spectra separately showed that the electrodeposited films on the Ga(l) electrodes were not composed of amorphous carbon from solvent decomposition. The cumulative data support two primary contentions. First, a liquid-metal electrode can serve simultaneously as both a source of electrons for the heterogeneous reduction of dissolved Si precursor in the electrolyte (i.e., a conventional electrode) and a separate phase (i.e., a solvent) that promotes Si crystal growth. Second, ec-LLS is a process that can be exploited for direct production of crystalline Si at much lower temperatures than ever reported previously. The further prospect of ec-LLS as an electrochemical and non-energy-intensive route for preparing crystalline Si is discussed.