N- and P-Channel Transport Behavior in Thin Film Transistors Based on Tricyanovinyl-Capped Oligothiophenes

• Published in: The journal of physical chemistry. B Vol. 110; no. 30; pp. 14590 - 14597
• Main Authors: Cai, Xiuyu, Burand, Michael W, Newman, Christopher R, da Silva Filho, Demetrio A, Pappenfus, Ted M, Bader, Mamoun M, Brédas, Jean-Luc, Mann, Kent R, Frisbie, C. Daniel
• Format: Journal Article
• Language: English
• Published: United States American Chemical Society 03-08-2006
• ISSN: 1520-6106; 1520-5207
• DOI: 10.1021/jp061168v

We report the structural and electrical characterization of thin films of organic semiconductor molecules consisting of an oligothiophene core capped with electron-withdrawing tricyanovinyl (TCV) groups. X-ray diffraction and atomic force microscopy of evaporated films of three different TCV-capped oligothiophenes showed that the films were highly crystalline. Electrical transport was measured in thin film transistors employing silver source and drain contacts and channel probes to correct for contact resistance. Three compounds exhibited n-channel (electron) conduction consistent with cyclic voltametry data that indicated they undergo facile reduction. Maximum electron mobilities were 0.02 cm2/V·s with an on/off current ratio of 106. A fourth end-capped molecule, TCV-6T-TCV, which had six thiophene rings, exhibited both p- and n-channel transport. Overall, these results confirm that substitution of oligothiophene cores with electron-withdrawing groups is a useful strategy to achieve electron-transporting materials.