Three-fold Symmetric Doping Mechanism in GaAs Nanowires

A new dopant incorporation mechanism in Ga-assisted GaAs nanowires grown by molecular beam epitaxy is reported. Off-axis electron holography revealed that p-type Be dopants introduced in situ during molecular beam epitaxy growth of the nanowires were distributed inhomogeneously in the nanowire cross...

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Published in:	Nano letters Vol. 17; no. 10; pp. 5875 - 5882
Main Authors:	Dastjerdi, M. H. T, Fiordaliso, E. M, Leshchenko, E. D, Akhtari-Zavareh, A, Kasama, T, Aagesen, M, Dubrovskii, V. G, LaPierre, R. R
Format:	Journal Article
Language:	English
Published:	United States American Chemical Society 11-10-2017
Subjects:	gallium arsenide molecular beam epitaxy nanowires self-assisted doping beryllium GaAs
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Abstract	A new dopant incorporation mechanism in Ga-assisted GaAs nanowires grown by molecular beam epitaxy is reported. Off-axis electron holography revealed that p-type Be dopants introduced in situ during molecular beam epitaxy growth of the nanowires were distributed inhomogeneously in the nanowire cross-section, perpendicular to the growth direction. The active dopants showed a remarkable azimuthal distribution along the (111)B flat top of the nanowires, which is attributed to preferred incorporation along 3-fold symmetric truncated facets under the Ga droplet. A diffusion model is presented to explain the unique radial and azimuthal variation of the active dopants in the GaAs nanowires.
AbstractList	A new dopant incorporation mechanism in Ga-assisted GaAs nanowires grown by molecular beam epitaxy is reported. Off-axis electron holography revealed that p-type Be dopants introduced in situ during molecular beam epitaxy growth of the nanowires were distributed inhomogeneously in the nanowire cross-section, perpendicular to the growth direction. The active dopants showed a remarkable azimuthal distribution along the (111)B flat top of the nanowires, which is attributed to preferred incorporation along 3-fold symmetric truncated facets under the Ga droplet. A diffusion model is presented to explain the unique radial and azimuthal variation of the active dopants in the GaAs nanowires.
Author	Leshchenko, E. D Dastjerdi, M. H. T Kasama, T Fiordaliso, E. M Aagesen, M Dubrovskii, V. G LaPierre, R. R Akhtari-Zavareh, A
AuthorAffiliation	Department of Engineering Physics, Centre for Emerging Device Technologies McMaster University Center for Quantum Devices, Niels Bohr Institute Technical University of Denmark Ioffe Physical Technical Institute of the Russian Academy of Sciences University of Copenhagen Center for Electron Nanoscopy St. Petersburg Academic University
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BackLink	https://www.ncbi.nlm.nih.gov/pubmed/28903563$$D View this record in MEDLINE/PubMed
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