Fabrication and Device Characterization of Omega-Shaped-Gate ZnO Nanowire Field-Effect Transistors

Omega-shaped-gate (OSG) nanowire-based field effect transistors (FETs) have attracted a great deal of attention recently, because theoretical simulations predicted that they should have a higher device performance than nanowire-based FETs with other gate geometries. OSG FETs with channels composed o...

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Bibliographic Details
Published in:	Nano letters Vol. 6; no. 7; pp. 1454 - 1458
Main Authors:	Keem, Kihyun, Jeong, Dong-Young, Kim, Sangsig, Lee, Moon-Sook, Yeo, In-Seok, Chung, U-In, Moon, Joo-Tae
Format:	Journal Article
Language:	English
Published:	Washington, DC American Chemical Society 01-07-2006
Subjects:	Aluminum Oxide - chemistry Cross-disciplinary physics: materials science; rheology Equipment Design Exact sciences and technology Growth from vapor Materials science Methods of crystal growth; physics of crystal growth Methods of nanofabrication Microscopy, Scanning Tunneling Nanoscale materials and structures: fabrication and characterization Nanostructures Other topics in nanoscale materials and structures Physics Quantum wires Surface Properties Transistors, Electronic Zinc Oxide - chemistry Atomic layer method Field effect transistors Digital simulation Crystal growth from vapors Nanowires Nanostructured materials Gates Transconductance Nanomaterial synthesis
Online Access:	Get full text
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