Control of InAs Nanowire Growth Directions on Si

We report on control of growth directions of InAs nanowires on Si substrate. We achieved to integrate vertical InAs nanowires on Si by modifying initial Si(111) surface in selective-area metal-organic vapor phase epitaxy with flow-rate modulation mode at low temperature. Cross-sectional transmission...

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Bibliographic Details
Published in:	Nano letters Vol. 8; no. 10; pp. 3475 - 3480
Main Authors:	Tomioka, Katsuhiro, Motohisa, Junichi, Hara, Shinjiroh, Fukui, Takashi
Format:	Journal Article
Language:	English
Published:	Washington, DC American Chemical Society 01-10-2008
Subjects:	Chemical synthesis methods Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science; rheology Exact sciences and technology Materials science Methods of nanofabrication Nanocrystalline materials Nanoscale materials and structures: fabrication and characterization Nanoscale materials: clusters, nanoparticles, nanotubes, and nanocrystals Physics Structure of solids and liquids; crystallography Misfit dislocations Flow rate Transmission electron microscopy Selective area Raman scattering MOVPE method Growth mechanism Nanowires Surface area Nanostructured materials III-V semiconductors
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Summary:	We report on control of growth directions of InAs nanowires on Si substrate. We achieved to integrate vertical InAs nanowires on Si by modifying initial Si(111) surface in selective-area metal-organic vapor phase epitaxy with flow-rate modulation mode at low temperature. Cross-sectional transmission electron microscope and Raman scattering showed that misfit dislocation with local strains were accommodated in the interface.
Bibliography:	ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23
ISSN:	1530-6984 1530-6992
DOI:	10.1021/nl802398j