Intrinsic Memory Function of Carbon Nanotube-based Ferroelectric Field-Effect Transistor

• Published in: Nano letters Vol. 9; no. 3; pp. 921 - 925
• Main Authors: Fu, Wangyang, Xu, Zhi, Bai, Xuedong, Gu, Changzhi, Wang, Enge
• Format: Journal Article
• Language: English
• Published: Washington, DC American Chemical Society 11-03-2009
• Subjects: Applied sciences; Cross-disciplinary physics: materials science; rheology; Electronics; Exact sciences and technology; Materials science; Nanocrystalline materials; Nanoscale materials and structures: fabrication and characterization; Nanotubes; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Transistors; Charge storage; Memory devices; Epitaxial layers; Field effect transistors; Memory; Digital simulation; Carbon nanotubes; Carbon; Thin films; Hysteresis loop; Singlewalled nanotube; Experimental result; Electric field effects; Nanostructured materials
• DOI: 10.1021/nl801656w
• EISSN: 1530-6992
• ISSN: 1530-6984

We demonstrate the intrinsic memory function of ferroelectric field-effect transistors (FeFETs) based on an integration of individual single-walled carbon nanotubes (SWCNTs) and epitaxial ferroelectric films. In contrast to the previously reported “charge-storage” CNT-FET memories, whose operations are haunted by a lack of control over the “charge traps”, the present CNT-FeFETs exhibit a well-defined memory hysteresis loop induced by the reversible remnant polarization of the ferroelectric films. Large memory windows ∼4 V, data retention time up to 1 week, and ultralow power consumption (energy per bit) of ∼femto-joule, are highlighted in this report. Further simulations and experimental results show that the memory device is valid under operation voltage less than 1 V due to an electric-field enhancement effect induced by the ultrathin SWCNTs.