Crystal Phases in Hybrid Metal–Semiconductor Nanowire Devices

We investigate the metallic phases observed in hybrid metal-GaAs nanowire devices obtained by controlled thermal annealing of Ni/Au electrodes. Devices are fabricated onto a SiN membrane compatible with transmission electron microscopy studies. Energy dispersive X-ray spectroscopy allows us to show...

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Bibliographic Details
Published in:	Nano letters Vol. 17; no. 4; pp. 2336 - 2341
Main Authors:	David, J, Rossella, F, Rocci, M, Ercolani, D, Sorba, L, Beltram, F, Gemmi, M, Roddaro, S
Format:	Journal Article
Language:	English
Published:	United States American Chemical Society 12-04-2017
Subjects:	thermal annealing transmission electron microscopy GaAs nanowires hybrid metal−semiconductor nanowires Electron diffraction tomography
Online Access:	Get full text
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Summary:	We investigate the metallic phases observed in hybrid metal-GaAs nanowire devices obtained by controlled thermal annealing of Ni/Au electrodes. Devices are fabricated onto a SiN membrane compatible with transmission electron microscopy studies. Energy dispersive X-ray spectroscopy allows us to show that the nanowire body includes two Ni-rich phases that thanks to an innovative use of electron diffraction tomography can be unambiguously identified as Ni3GaAs and Ni5As2 crystals. The mechanisms of Ni incorporation leading to the observed phenomenology are discussed.
Bibliography:	ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23
ISSN:	1530-6984 1530-6992
DOI:	10.1021/acs.nanolett.6b05223