Toward Truly Single Crystalline GeTe Films: The Relevance of the Substrate Surface
The growth of GeTe thin films on a Si(111)-(√3 × √3)R30°-Sb surface is reported. At growth onset, the rapid formation of fully relaxed crystalline GeTe(0001)-(1 × 1) is observed. During growth, a GeTe(0001)-(√3 × √3)R30° surface reconstruction is also detected. Indeed, density functional theory (DFT...
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| Published in: | Journal of physical chemistry. C Vol. 118; no. 51; pp. 29724 - 29730 |
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26-12-2014
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| Abstract | The growth of GeTe thin films on a Si(111)-(√3 × √3)R30°-Sb surface is reported. At growth onset, the rapid formation of fully relaxed crystalline GeTe(0001)-(1 × 1) is observed. During growth, a GeTe(0001)-(√3 × √3)R30° surface reconstruction is also detected. Indeed, density functional theory (DFT) simulations indicate that the reconstructed GeTe(0001)-(√3 × √3)R30° structure is energetically competing with the GeTe(0001)-(1 × 1) reconstruction. The out-of-plane α-GeTe ||Si and in-plane α-GeTe<−1010>||Si<−211> epitaxial relationships are confirmed by X-ray diffraction (XRD). Suppression of rotational twist and reduction of twinned domains are achieved. The formation of rotational domains in GeTe grown on Si(111)-(7 × 7) is explained by domain matched coincidence lattice formation with the Si(111)-(1 × 1) surface. Atomic force microscopy (AFM) images show the coalescence of well-oriented islands with subnanometer roughness on their top part. van der Pauw measurements are performed to verify the electric properties of the films. The quality of epitaxial GeTe thin film is discussed and related to the crystalline structure of GeTe and its rhombohedrally distorted resonant bonds. |
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| AbstractList | The growth of GeTe thin films on a Si(111)-(√3 × √3)R30°-Sb surface is reported. At growth onset, the rapid formation of fully relaxed crystalline GeTe(0001)-(1 × 1) is observed. During growth, a GeTe(0001)-(√3 × √3)R30° surface reconstruction is also detected. Indeed, density functional theory (DFT) simulations indicate that the reconstructed GeTe(0001)-(√3 × √3)R30° structure is energetically competing with the GeTe(0001)-(1 × 1) reconstruction. The out-of-plane α-GeTe ||Si and in-plane α-GeTe<−1010>||Si<−211> epitaxial relationships are confirmed by X-ray diffraction (XRD). Suppression of rotational twist and reduction of twinned domains are achieved. The formation of rotational domains in GeTe grown on Si(111)-(7 × 7) is explained by domain matched coincidence lattice formation with the Si(111)-(1 × 1) surface. Atomic force microscopy (AFM) images show the coalescence of well-oriented islands with subnanometer roughness on their top part. van der Pauw measurements are performed to verify the electric properties of the films. The quality of epitaxial GeTe thin film is discussed and related to the crystalline structure of GeTe and its rhombohedrally distorted resonant bonds. |
| Author | Wang, Ruining Bruyer, Emilie Picozzi, Silvia Perumal, Karthick Giussani, Alessandro Calarco, Raffaella Sante, Domenico Di Riechert, Henning Boschker, Jos E |
| AuthorAffiliation | Department of Physical and Chemical Sciences University of L’Aquila |
| AuthorAffiliation_xml | – name: University of L’Aquila – name: Department of Physical and Chemical Sciences |
| Author_xml | – sequence: 1 givenname: Ruining surname: Wang fullname: Wang, Ruining email: wang@pdi-berlin.de – sequence: 2 givenname: Jos E surname: Boschker fullname: Boschker, Jos E – sequence: 3 givenname: Emilie surname: Bruyer fullname: Bruyer, Emilie – sequence: 4 givenname: Domenico Di surname: Sante fullname: Sante, Domenico Di – sequence: 5 givenname: Silvia surname: Picozzi fullname: Picozzi, Silvia – sequence: 6 givenname: Karthick surname: Perumal fullname: Perumal, Karthick – sequence: 7 givenname: Alessandro surname: Giussani fullname: Giussani, Alessandro – sequence: 8 givenname: Henning surname: Riechert fullname: Riechert, Henning – sequence: 9 givenname: Raffaella surname: Calarco fullname: Calarco, Raffaella |
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