Atomic Layer Deposition of MnS: Phase Control and Electrochemical Applications

• Published in: ACS applied materials & interfaces Vol. 8; no. 4; pp. 2774 - 2780
• Main Authors: Riha, Shannon C, Koegel, Alexandra A, Meng, Xiangbo, Kim, In Soo, Cao, Yanqiang, Pellin, Michael J, Elam, Jeffrey W, Martinson, Alex B. F
• Format: Journal Article
• Language: English
• Published: United States American Chemical Society 03-02-2016; American Chemical Society (ACS)
• Subjects: MATERIALS SCIENCE; manganese sulfide; ALD for batteries; atomic layer deposition; metal sulfide ALD; α-MnS; MnS battery anode; γ-MnS; thin film batteries
• ISSN: 1944-8244; 1944-8252
• DOI: 10.1021/acsami.5b11075

Manganese sulfide (MnS) thin films were synthesized via atomic layer deposition (ALD) using gaseous manganese bis­(ethylcyclopentadienyl) and hydrogen sulfide as precursors. At deposition temperatures ≤150 °C phase-pure γ-MnS thin films were deposited, while at temperatures >150 °C, a mixed phase consisting of both γ- and α-MnS resulted. In situ quartz crystal microbalance (QCM) studies validate the self-limiting behavior of both ALD half-reactions and, combined with quadrupole mass spectrometry (QMS), allow the derivation of a self-consistent reaction mechanism. Finally, MnS thin films were deposited on copper foil and tested as a Li-ion battery anode. The MnS coin cells showed exceptional cycle stability and near-theoretical capacity.