Laser ablation/ionization technique for trace element analysis

Laser ablation/ionization technique for trace element analysis

The laser ablation/ionization technique combined with a reflectron time-of-flight mass spectrometer was used to detect trace elements in industry-made semiconductor samples of silicon and GaAs.

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Bibliographic Details
Published in:Analytical chemistry (Washington) Vol. 65; no. 22; pp. 3194 - 3198
Main Authors: Alimpiev, S. S, Belov, M. E, Nikiforov, S. M
Format: Journal Article
Language:English
Published: Washington American Chemical Society 15-11-1993
Subjects:
Chemistry
Lasers
Semiconductors
Online Access:Get full text
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Description
Summary:The laser ablation/ionization technique combined with a reflectron time-of-flight mass spectrometer was used to detect trace elements in industry-made semiconductor samples of silicon and GaAs.
Bibliography:ark:/67375/TPS-PGLCRVTR-V
istex:B58B7329EECD41115B181707167E2FA178A60B20
ISSN:0003-2700
1520-6882
DOI:10.1021/ac00070a005