Controlling Self-Assembly of Reduced Graphene Oxide at the Air–Water Interface: Quantitative Evidence for Long-Range Attractive and Many-Body Interactions

Industrial-scale applications of two-dimensional materials are currently limited due to lack of a cost-effective and controlled synthesis method for large-area monolayer films. Self-assembly at fluid interfaces is one promising method. Here, we present a quantitative analysis of the forces governing...

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Bibliographic Details
Published in:ACS applied materials & interfaces Vol. 7; no. 6; pp. 3807 - 3815
Main Authors: Silverberg, Gregory J, Pearce, Phoebe, Vecitis, Chad D
Format: Journal Article
Language:English
Published: United States American Chemical Society 18-02-2015
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Summary:Industrial-scale applications of two-dimensional materials are currently limited due to lack of a cost-effective and controlled synthesis method for large-area monolayer films. Self-assembly at fluid interfaces is one promising method. Here, we present a quantitative analysis of the forces governing reduced graphene oxide (rGO) assembly at the air–water interface using two unique approaches: area-based radial distribution functions and a theoretical Derjaguin–Landau–Verwey–Overbeek (DLVO) interaction potential for disks interacting edge-to-edge. rGO aggregates at the air–water interface when the subphase ionic strength results in a Debye screening length equal to the rGO thickness (∼1 mM NaCl), which is consistent with the DLVO interaction potential. At lower ionic strengths, area-based radial distribution functions indicate that rGO–rGO interactions at the air–water interface are dominated by long-range (tens of microns) attractive and many-body repulsive forces. The attractive forces are electrostatic in nature; that is, the force is weakened by minor increases in ionic strength. A quantitative understanding of rGO–rGO interactions at the air–water interface may allow for rational synthesis of large-area atomically thin films that have potential for planar electronics and membranes.
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ISSN:1944-8244
1944-8252
DOI:10.1021/am5087984