Controlling Bandgap of Rippled Hexagonal Boron Nitride Membranes via Plasma Treatment

Few-layer rippled hexagonal boron nitride (h-BN) membranes were processed with hydrogen plasma, which exhibit distinct and pronounced changes in its electronic properties after the plasma treatment. The bandgaps of the h-BN membrane reduced from ∼5.6 eV at 0 s to ∼4.25 eV at 250s, which is a signatu...

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Bibliographic Details

Published in:	ACS applied materials & interfaces Vol. 4; no. 1; pp. 30 - 33
Main Authors:	Zhang, H. X, Feng, P. X
Format:	Journal Article
Language:	English
Published:	United States American Chemical Society 25-01-2012
Subjects:	ripples h-BN membrane bandgap plasma hydrogenation TEM
Online Access:	Get full text
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