Controlling Bandgap of Rippled Hexagonal Boron Nitride Membranes via Plasma Treatment
Few-layer rippled hexagonal boron nitride (h-BN) membranes were processed with hydrogen plasma, which exhibit distinct and pronounced changes in its electronic properties after the plasma treatment. The bandgaps of the h-BN membrane reduced from ∼5.6 eV at 0 s to ∼4.25 eV at 250s, which is a signatu...
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| Published in: | ACS applied materials & interfaces Vol. 4; no. 1; pp. 30 - 33 |
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| Abstract | Few-layer rippled hexagonal boron nitride (h-BN) membranes were processed with hydrogen plasma, which exhibit distinct and pronounced changes in its electronic properties after the plasma treatment. The bandgaps of the h-BN membrane reduced from ∼5.6 eV at 0 s to ∼4.25 eV at 250s, which is a signature of transition from the insulating to the semiconductive regime. It typically required 250 s of plasma treatment to reach the saturation. It illustrates that two-dimensional material with engineered electronic properties can be created by attaching other atoms or molecules. |
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| AbstractList | Few-layer rippled hexagonal boron nitride (h-BN) membranes were processed with hydrogen plasma, which exhibit distinct and pronounced changes in its electronic properties after the plasma treatment. The bandgaps of the h-BN membrane reduced from ~5.6 eV at 0 s to ~4.25 eV at 250 s, which is a signature of transition from the insulating to the semiconductive regime. It typically required 250 s of plasma treatment to reach the saturation. It illustrates that two-dimensional material with engineered electronic properties can be created by attaching other atoms or molecules. Few-layer rippled hexagonal boron nitride (h-BN) membranes were processed with hydrogen plasma, which exhibit distinct and pronounced changes in its electronic properties after the plasma treatment. The bandgaps of the h-BN membrane reduced from ∼5.6 eV at 0 s to ∼4.25 eV at 250s, which is a signature of transition from the insulating to the semiconductive regime. It typically required 250 s of plasma treatment to reach the saturation. It illustrates that two-dimensional material with engineered electronic properties can be created by attaching other atoms or molecules. |
| Author | Zhang, H. X Feng, P. X |
| AuthorAffiliation | University of Puerto Rico National Laboratory |
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| BackLink | https://www.ncbi.nlm.nih.gov/pubmed/22201217$$D View this record in MEDLINE/PubMed |
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| Keywords | ripples h-BN membrane bandgap plasma hydrogenation TEM |
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| Title | Controlling Bandgap of Rippled Hexagonal Boron Nitride Membranes via Plasma Treatment |
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